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BUK7Y3R5-40E-VB Product details
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BUK7Y3R5-40E-VB MOSFET Product Introduction
BUK7Y3R5-40E-VB is a high-performance N-channel MOSFET in SOT669 package. It has a drain-source voltage (V_DS) of 40V and a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 1.4V. This MOSFET uses Trench technology and has a very low on-state resistance (R_DS(ON)), which is 2.4 mΩ at V_GS of 4.5V and 2 mΩ at V_GS of 10V. It supports up to 100A of continuous drain current (I_D), suitable for application scenarios that require high current handling and efficient switching control.
BUK7Y3R5-40E-VB is a high-performance N-channel MOSFET in SOT669 package. It has a drain-source voltage (V_DS) of 40V and a gate-source voltage (V_GS) of ±20V, and a threshold voltage (V_th) of 1.4V. This MOSFET uses Trench technology and has a very low on-state resistance (R_DS(ON)), which is 2.4 mΩ at V_GS of 4.5V and 2 mΩ at V_GS of 10V. It supports up to 100A of continuous drain current (I_D), suitable for application scenarios that require high current handling and efficient switching control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
1. **Package**: SOT669
- Small, compact package suitable for space-constrained applications and provides good heat dissipation performance.
2. **Configuration**: Single N-channel
- Suitable for efficient switching and control circuits, especially where high current and high efficiency performance are required.
3. **V_DS (drain-source voltage)**: 40V
- Suitable for applications handling medium voltages, and can stably withstand drain-source voltages up to 40V.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to various circuit design requirements.
5. **V_th (threshold voltage)**: 1.4V
- At this voltage, the MOSFET starts to turn on, suitable for efficient switching operation at low voltages.
6. **R_DS(ON)**:
- 2.4 mΩ @ V_GS = 4.5V
- 2 mΩ @ V_GS = 10V
- Extremely low on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 100A
- Supports high current loads and is suitable for high current handling applications.
8. **Technology**: Trench
- Advanced Trench technology provides excellent switching performance and low on-resistance, suitable for high-efficiency circuit design.
1. **Package**: SOT669
- Small, compact package suitable for space-constrained applications and provides good heat dissipation performance.
2. **Configuration**: Single N-channel
- Suitable for efficient switching and control circuits, especially where high current and high efficiency performance are required.
3. **V_DS (drain-source voltage)**: 40V
- Suitable for applications handling medium voltages, and can stably withstand drain-source voltages up to 40V.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to various circuit design requirements.
5. **V_th (threshold voltage)**: 1.4V
- At this voltage, the MOSFET starts to turn on, suitable for efficient switching operation at low voltages.
6. **R_DS(ON)**:
- 2.4 mΩ @ V_GS = 4.5V
- 2 mΩ @ V_GS = 10V
- Extremely low on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 100A
- Supports high current loads and is suitable for high current handling applications.
8. **Technology**: Trench
- Advanced Trench technology provides excellent switching performance and low on-resistance, suitable for high-efficiency circuit design.
Domain and module applications：
Application Examples
**1. Power Converter: **
- **Field**: Switching Power Supply
- **Example**: In the switching power supply module, BUK7Y3R5-40E-VB effectively reduces power consumption and improves system efficiency through its low on-state resistance and high current handling capability, and is suitable for use in DC-DC converters and AC-DC power supply modules.
**2. Electric Vehicles: **
- **Field**: Battery Management System
- **Example**: In the battery management system of electric vehicles, BUK7Y3R5-40E-VB can efficiently handle the high current load of the battery, ensure battery stability and system efficiency, and is suitable for battery switching and motor drive control of electric vehicles.
**3. Industrial equipment: **
- **Field**: Motor drive control
- **Example**: In industrial motor drive systems, BUK7Y3R5-40E-VB provides efficient switch control and can handle large current loads. It is suitable for motor controllers and drive circuits to ensure stable operation and efficient operation of the equipment.
**4. Solar inverter: **
- **Field**: Renewable energy
- **Example**: In solar inverters, BUK7Y3R5-40E-VB can efficiently handle the current output of solar panels and ensure efficient energy conversion. It is suitable for switch control and current management in solar systems.
**5. Consumer electronics: **
- **Field**: Smart devices
- **Example**: In the power management module of a smartphone or tablet, BUK7Y3R5-40E-VB can provide efficient power switch control, reduce power consumption, and improve the endurance of the device.
The low on-state resistance and high current carrying capability of the BUK7Y3R5-40E-VB MOSFET make it an ideal choice for efficient power management, electric vehicles, motor control and many other fields.
**1. Power Converter: **
- **Field**: Switching Power Supply
- **Example**: In the switching power supply module, BUK7Y3R5-40E-VB effectively reduces power consumption and improves system efficiency through its low on-state resistance and high current handling capability, and is suitable for use in DC-DC converters and AC-DC power supply modules.
**2. Electric Vehicles: **
- **Field**: Battery Management System
- **Example**: In the battery management system of electric vehicles, BUK7Y3R5-40E-VB can efficiently handle the high current load of the battery, ensure battery stability and system efficiency, and is suitable for battery switching and motor drive control of electric vehicles.
**3. Industrial equipment: **
- **Field**: Motor drive control
- **Example**: In industrial motor drive systems, BUK7Y3R5-40E-VB provides efficient switch control and can handle large current loads. It is suitable for motor controllers and drive circuits to ensure stable operation and efficient operation of the equipment.
**4. Solar inverter: **
- **Field**: Renewable energy
- **Example**: In solar inverters, BUK7Y3R5-40E-VB can efficiently handle the current output of solar panels and ensure efficient energy conversion. It is suitable for switch control and current management in solar systems.
**5. Consumer electronics: **
- **Field**: Smart devices
- **Example**: In the power management module of a smartphone or tablet, BUK7Y3R5-40E-VB can provide efficient power switch control, reduce power consumption, and improve the endurance of the device.
The low on-state resistance and high current carrying capability of the BUK7Y3R5-40E-VB MOSFET make it an ideal choice for efficient power management, electric vehicles, motor control and many other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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