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BUK7Y35-55B-VB Product details
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Product Introduction
BUK7Y35-55B-VB is a high-efficiency single N-channel MOSFET in a SOT669 package. The device can withstand drain-source voltage (VDS) up to 60V and supports gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) varies from 1V to 3V. At VGS of 4.5V, its on-resistance (RDS(ON)) is 7.8mΩ, and at VGS of 10V it is 6.2mΩ, and supports a continuous drain current (ID) of up to 64A. BUK7Y35-55B-VB uses Trench technology, with low conduction loss and excellent switching performance, making it ideal for a variety of high current and high efficiency application scenarios.
BUK7Y35-55B-VB is a high-efficiency single N-channel MOSFET in a SOT669 package. The device can withstand drain-source voltage (VDS) up to 60V and supports gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) varies from 1V to 3V. At VGS of 4.5V, its on-resistance (RDS(ON)) is 7.8mΩ, and at VGS of 10V it is 6.2mΩ, and supports a continuous drain current (ID) of up to 64A. BUK7Y35-55B-VB uses Trench technology, with low conduction loss and excellent switching performance, making it ideal for a variety of high current and high efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | 6.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK7Y35-55B-VB
- **Package type**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1V ~ 3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Drain current (ID)**: 64A
- **Technology**: Trench
- **Model**: BUK7Y35-55B-VB
- **Package type**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1V ~ 3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Drain current (ID)**: 64A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power conversion and management**
BUK7Y35-55B-VB is ideal for power conversion and management systems, such as DC-DC converters and power switch modules. Its low on-resistance and high current handling capability can significantly improve power conversion efficiency and reduce power consumption, making it an ideal switching element in power management systems.
2. **Electric vehicles**
In electric vehicle applications, BUK7Y35-55B-VB is able to handle high current loads in battery management systems (BMS) and electric drive systems. Its low conduction losses ensure efficient energy transfer between the battery and drive system, helping to improve the overall performance and endurance of electric vehicles.
3. **Industrial automation**
In industrial automation, this MOSFET is suitable for motor drive and servo control systems. Its high current carrying capacity and low on-resistance can ensure stable operation of industrial equipment under high load conditions, improving the overall reliability and performance of the system.
4. **High-efficiency lighting system**
BUK7Y35-55B-VB is also suitable for high-efficiency LED lighting systems, which can effectively control the current of LEDs and reduce energy loss. Its excellent switching performance and low on-resistance can improve the brightness and energy efficiency of lighting systems and extend the service life of LEDs.
These application examples show the wide applicability of BUK7Y35-55B-VB in high-current and high-efficiency applications. Its excellent electrical characteristics make it an ideal choice for a variety of critical applications.
1. **Power conversion and management**
BUK7Y35-55B-VB is ideal for power conversion and management systems, such as DC-DC converters and power switch modules. Its low on-resistance and high current handling capability can significantly improve power conversion efficiency and reduce power consumption, making it an ideal switching element in power management systems.
2. **Electric vehicles**
In electric vehicle applications, BUK7Y35-55B-VB is able to handle high current loads in battery management systems (BMS) and electric drive systems. Its low conduction losses ensure efficient energy transfer between the battery and drive system, helping to improve the overall performance and endurance of electric vehicles.
3. **Industrial automation**
In industrial automation, this MOSFET is suitable for motor drive and servo control systems. Its high current carrying capacity and low on-resistance can ensure stable operation of industrial equipment under high load conditions, improving the overall reliability and performance of the system.
4. **High-efficiency lighting system**
BUK7Y35-55B-VB is also suitable for high-efficiency LED lighting systems, which can effectively control the current of LEDs and reduce energy loss. Its excellent switching performance and low on-resistance can improve the brightness and energy efficiency of lighting systems and extend the service life of LEDs.
These application examples show the wide applicability of BUK7Y35-55B-VB in high-current and high-efficiency applications. Its excellent electrical characteristics make it an ideal choice for a variety of critical applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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