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BUK7Y29-40E-VB Product details
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BUK7Y29-40E-VB MOSFET Product Introduction
BUK7Y29-40E-VB is a high-performance single N-channel power MOSFET in a SOT669 package, designed for medium voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) range of ±20V, ensuring reliable operation under a wide range of operating conditions. Its threshold voltage (Vth) is 1.4V, allowing the MOSFET to start conducting at a lower gate voltage. The on-resistance (RDS(ON)) of BUK7Y29-40E-VB is 2.4mΩ @ VGS=4.5V and 2mΩ @ VGS=10V, supporting a maximum continuous drain current (ID) of 100A. Using Trench technology, it provides extremely low on-resistance and excellent switching performance, suitable for applications requiring high current and high efficiency.
BUK7Y29-40E-VB is a high-performance single N-channel power MOSFET in a SOT669 package, designed for medium voltage and high current applications. The MOSFET has a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) range of ±20V, ensuring reliable operation under a wide range of operating conditions. Its threshold voltage (Vth) is 1.4V, allowing the MOSFET to start conducting at a lower gate voltage. The on-resistance (RDS(ON)) of BUK7Y29-40E-VB is 2.4mΩ @ VGS=4.5V and 2mΩ @ VGS=10V, supporting a maximum continuous drain current (ID) of 100A. Using Trench technology, it provides extremely low on-resistance and excellent switching performance, suitable for applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
1. **Package:** SOT669
2. **Configuration:** Single N-channel
3. **VDS (drain-source voltage):** 40V
4. **VGS (gate-source voltage):** ±20V
5. **Vth (threshold voltage):** 1.4V
6. **RDS(ON) (on-resistance):**
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
7. **ID (continuous leakage current):** 100A
8. **Technology:** Trench
1. **Package:** SOT669
2. **Configuration:** Single N-channel
3. **VDS (drain-source voltage):** 40V
4. **VGS (gate-source voltage):** ±20V
5. **Vth (threshold voltage):** 1.4V
6. **RDS(ON) (on-resistance):**
- 2.4mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
7. **ID (continuous leakage current):** 100A
8. **Technology:** Trench
Domain and module applications：
Application fields and usage scenarios
BUK7Y29-40E-VB MOSFET is suitable for the following fields and modules due to its low on-resistance and high current handling capability:
1. **Power management:** Used in switch mode power supplies (SMPS) and high power power modules to provide efficient power conversion and stable power output to meet applications with high current requirements.
2. **Electric vehicles:** Used in battery management and electric drive systems of electric vehicles to handle high current and medium voltage to ensure efficient power transmission and system stability.
3. **Industrial control:** Used for motor control and load switching in industrial automation equipment to support high power applications and improve system reliability and efficiency.
4. **LED drive:** Used in LED drive circuits to provide stable current control to ensure the brightness and service life of LED lamps.
5. **DC-DC converter:** Used in high current DC-DC converters to provide stable voltage conversion to meet the needs of various electronic devices and applications.
6. **Battery Management System:** Applicable to battery management systems to control the battery charge and discharge process, ensure battery safety and extend its service life.
These application examples demonstrate the wide range of uses of BUK7Y29-40E-VB MOSFET and its superior performance under medium voltage, high current and high efficiency requirements, suitable for a variety of high power and high efficiency application scenarios.
BUK7Y29-40E-VB MOSFET is suitable for the following fields and modules due to its low on-resistance and high current handling capability:
1. **Power management:** Used in switch mode power supplies (SMPS) and high power power modules to provide efficient power conversion and stable power output to meet applications with high current requirements.
2. **Electric vehicles:** Used in battery management and electric drive systems of electric vehicles to handle high current and medium voltage to ensure efficient power transmission and system stability.
3. **Industrial control:** Used for motor control and load switching in industrial automation equipment to support high power applications and improve system reliability and efficiency.
4. **LED drive:** Used in LED drive circuits to provide stable current control to ensure the brightness and service life of LED lamps.
5. **DC-DC converter:** Used in high current DC-DC converters to provide stable voltage conversion to meet the needs of various electronic devices and applications.
6. **Battery Management System:** Applicable to battery management systems to control the battery charge and discharge process, ensure battery safety and extend its service life.
These application examples demonstrate the wide range of uses of BUK7Y29-40E-VB MOSFET and its superior performance under medium voltage, high current and high efficiency requirements, suitable for a variety of high power and high efficiency application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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