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BUK7Y28-75B-VB Product details
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Product Overview: BUK7Y28-75B-VB
BUK7Y28-75B-VB is a high-performance unipolar N-channel MOSFET in SOT669 package. It has a drain-source voltage (V_DS) of 80V and a gate-source voltage (V_GS) of 20V (±V), and a threshold voltage (V_th) of 1.4V. The on-resistance (R_DS(on)) of the MOSFET is 7.2mΩ at a gate-source voltage of 4.5V and 6mΩ at a gate-source voltage of 10V, and the maximum continuous drain current (I_D) is 90A. The MOSFET adopts Trench technology, which provides excellent switching performance and low conduction loss, and is suitable for high current and high voltage applications.
BUK7Y28-75B-VB is a high-performance unipolar N-channel MOSFET in SOT669 package. It has a drain-source voltage (V_DS) of 80V and a gate-source voltage (V_GS) of 20V (±V), and a threshold voltage (V_th) of 1.4V. The on-resistance (R_DS(on)) of the MOSFET is 7.2mΩ at a gate-source voltage of 4.5V and 6mΩ at a gate-source voltage of 10V, and the maximum continuous drain current (I_D) is 90A. The MOSFET adopts Trench technology, which provides excellent switching performance and low conduction loss, and is suitable for high current and high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 80V | 1.4V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Drain-source voltage (V_DS):** 80V
- The maximum voltage that can be applied between the drain and the source.
- **Gate-source voltage (V_GS):** 20V (±V)
- The maximum voltage that can be applied between the gate and the source.
- **Threshold voltage (V_th):** 1.4V
- The minimum gate-source voltage required for the MOSFET to turn on.
- **On-resistance (R_DS(on)):** 7.2mΩ @ V_GS = 4.5V
- The resistance between the drain and the source when the MOSFET is turned on, measured when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 6mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is turned on, measured when the gate-source voltage is 10V.
- **Maximum continuous drain current (I_D):** 90A
- The maximum continuous current that can flow through the drain terminal under proper heat dissipation conditions.
- **Package type:** SOT669
- The physical package of the MOSFET, which provides good heat dissipation performance and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that this MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, which has excellent switching performance and low conduction losses.
- **Drain-source voltage (V_DS):** 80V
- The maximum voltage that can be applied between the drain and the source.
- **Gate-source voltage (V_GS):** 20V (±V)
- The maximum voltage that can be applied between the gate and the source.
- **Threshold voltage (V_th):** 1.4V
- The minimum gate-source voltage required for the MOSFET to turn on.
- **On-resistance (R_DS(on)):** 7.2mΩ @ V_GS = 4.5V
- The resistance between the drain and the source when the MOSFET is turned on, measured when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 6mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is turned on, measured when the gate-source voltage is 10V.
- **Maximum continuous drain current (I_D):** 90A
- The maximum continuous current that can flow through the drain terminal under proper heat dissipation conditions.
- **Package type:** SOT669
- The physical package of the MOSFET, which provides good heat dissipation performance and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that this MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, which has excellent switching performance and low conduction losses.
Domain and module applications：
Application Examples
**1. Efficient Power Management: **
- BUK7Y28-75B-VB MOSFET is suitable for efficient power management systems. Its low on-resistance and high current handling capability make it ideal for high voltage DC-DC converters and switch mode power supplies (SMPS). This MOSFET can reduce energy loss and improve the overall efficiency of the power supply, and is suitable for high-efficiency power systems such as industrial power supplies and computer power supplies.
**2. Battery Management System (BMS): **
- In battery management systems, BUK7Y28-75B-VB MOSFET can be used for switching and protection functions, especially in application scenarios that require high current and high voltage. Its excellent on-resistance and high current capability make it suitable for electric vehicles, portable electronic devices, and industrial battery systems, ensuring efficient battery charging and discharging and system protection.
**3. Load Switch: **
- BUK7Y28-75B-VB MOSFET performs well in load switching applications. It is suitable for load switching in home appliances, power tools and industrial equipment, and can handle high current and high voltage switching operations, providing reliable switching functions and long life.
**4. Motor drive:**
- In motor drive systems, BUK7Y28-75B-VB MOSFET can be used for motor control. Its high voltage and high current handling capabilities ensure efficient operation of the motor, and it is suitable for motor control modules in electric vehicles and home appliances.
**5. Automotive electronics:**
- This MOSFET is also suitable for switching and control applications in automotive electronic systems, such as electric seat adjustment, power distribution and car light control. Its high current handling capability and low on-resistance ensure the stability and reliability of automotive electronic systems.
By applying BUK7Y28-75B-VB MOSFET to these fields, designers can achieve efficient and reliable performance, meet the needs of high voltage and high current applications, and become an ideal choice in modern high-power electronic systems.
**1. Efficient Power Management: **
- BUK7Y28-75B-VB MOSFET is suitable for efficient power management systems. Its low on-resistance and high current handling capability make it ideal for high voltage DC-DC converters and switch mode power supplies (SMPS). This MOSFET can reduce energy loss and improve the overall efficiency of the power supply, and is suitable for high-efficiency power systems such as industrial power supplies and computer power supplies.
**2. Battery Management System (BMS): **
- In battery management systems, BUK7Y28-75B-VB MOSFET can be used for switching and protection functions, especially in application scenarios that require high current and high voltage. Its excellent on-resistance and high current capability make it suitable for electric vehicles, portable electronic devices, and industrial battery systems, ensuring efficient battery charging and discharging and system protection.
**3. Load Switch: **
- BUK7Y28-75B-VB MOSFET performs well in load switching applications. It is suitable for load switching in home appliances, power tools and industrial equipment, and can handle high current and high voltage switching operations, providing reliable switching functions and long life.
**4. Motor drive:**
- In motor drive systems, BUK7Y28-75B-VB MOSFET can be used for motor control. Its high voltage and high current handling capabilities ensure efficient operation of the motor, and it is suitable for motor control modules in electric vehicles and home appliances.
**5. Automotive electronics:**
- This MOSFET is also suitable for switching and control applications in automotive electronic systems, such as electric seat adjustment, power distribution and car light control. Its high current handling capability and low on-resistance ensure the stability and reliability of automotive electronic systems.
By applying BUK7Y28-75B-VB MOSFET to these fields, designers can achieve efficient and reliable performance, meet the needs of high voltage and high current applications, and become an ideal choice in modern high-power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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