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BUK7Y22-100E-VB Product details

Product introduction:

Product Introduction



BUK7Y22-100E-VB is a high-performance N-channel MOSFET using Trench technology in SOT669 package. This MOSFET is designed for high-power, high-efficiency applications with high current carrying capacity and low on-resistance. Its maximum drain-source voltage (VDS) is 100V and its maximum drain current (ID) is 69A. The low on-resistance (RDS(ON)) is 13.92mΩ at VGS=4.5V and 11.6mΩ at VGS=10V, making it suitable for efficient power switching and power conversion applications, which can effectively reduce energy consumption and improve the overall performance of the system.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT669 Single-N 100V 1.4V 69A 11.6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT669 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT669 Single-N 100V 1.4V 69A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT669 Single-N 100V 1.4V 69A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT669 Single-N
Detailed parameter description



- **Package type**: SOT669

- **Configuration**: Single N-channel

- **Drain-source voltage (VDS)**: 100V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**: 1.4V

- **On-resistance (RDS(ON))**:

- 13.92mΩ @ VGS=4.5V

- 11.6mΩ @ VGS=10V

- **Drain current (ID)**: 69A

- **Technology**: Trench

- **Other key parameters**:

- **Power dissipation (Ptot)**: Typical value is 5W

- **Junction-to-ambient thermal resistance (RθJA)**: Maximum value is 50°C/W

- **Junction to case thermal resistance (RθJC)**: 2.5°C/W maximum

- **Operating temperature range (Tj)**: -55°C to +175°C



Domain and module applications:

Application fields and module examples



BUK7Y22-100E-VB MOSFET performs well in multiple high-power and high-efficiency applications. Here are some major application examples:



1. **Power management system**: In power management systems, BUK7Y22-100E-VB MOSFET is used to efficiently control power switching and current flow, optimize power conversion efficiency, and is suitable for high-power power supply design.



2. **Automotive electronics**: In automotive electronic systems, such as battery management systems and motor control modules, this MOSFET is able to handle high currents, provide reliable switching functions, and ensure the efficiency and stability of automotive electronic systems.



3. **Industrial automation**: In industrial automation equipment, such as motor drive systems and high-power controllers, BUK7Y22-100E-VB MOSFET is used to drive high-power loads, providing stable performance and efficient power conversion.



4. **High-efficiency switching power supply**: In high-efficiency switching power supply, this MOSFET is used to optimize the power conversion process and reduce energy loss. It is suitable for high-efficiency power supply systems such as computer power supply and communication power supply.



5. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In electric vehicles and hybrid electric vehicles, this MOSFET can be used for battery management and motor drive systems to handle high currents and ensure the efficiency and reliability of the system.



BUK7Y22-100E-VB MOSFET is an ideal choice for various high-power and high-efficiency applications due to its high current carrying capacity, low on-resistance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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