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BUK7Y21-40E-VB Product details
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BUK7Y21-40E-VB MOSFET Product Introduction
BUK7Y21-40E-VB is a single N-channel MOSFET in a SOT669 package, designed for high current, high efficiency applications. This MOSFET uses Trench technology and has a maximum drain-source voltage (VDS) of 40V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.4V, ensuring that it can be turned on at a low gate-source voltage. The on-resistance (RDS(ON)) of BUK7Y21-40E-VB is 2.4mΩ at a gate-source voltage of 4.5V, and is further reduced to 2mΩ at a gate-source voltage of 10V. This MOSFET supports a continuous drain current (ID) of up to 100A.
BUK7Y21-40E-VB is a single N-channel MOSFET in a SOT669 package, designed for high current, high efficiency applications. This MOSFET uses Trench technology and has a maximum drain-source voltage (VDS) of 40V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.4V, ensuring that it can be turned on at a low gate-source voltage. The on-resistance (RDS(ON)) of BUK7Y21-40E-VB is 2.4mΩ at a gate-source voltage of 4.5V, and is further reduced to 2mΩ at a gate-source voltage of 10V. This MOSFET supports a continuous drain current (ID) of up to 100A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application Examples
1. **High-efficiency switching power supply**:
- The low on-resistance and high current handling capability of BUK7Y21-40E-VB make it excellent in high-efficiency switching power supply applications. It can effectively handle high-power switching requirements, reduce power losses, and improve the overall efficiency of the power system, and is suitable for various high-efficiency power supply designs and converters.
2. **Electric Vehicle (EV) Charging System**:
- In the charging system of electric vehicles, the high current carrying capacity and low on-resistance of this MOSFET can ensure the stability and efficiency of the charging process. It can reduce heat generation during the charging process, improve the safety and performance of the charging system, and is suitable for high-power charging solutions.
3. **Industrial Motor Drive**:
- For industrial motor drive applications that require high current and low on-resistance, BUK7Y21-40E-VB is an ideal choice. It can improve system performance and efficiency in high-power motor control, and is suitable for various motor drives and control systems.
4. **LED driver circuit**:
- The application of BUK7Y21-40E-VB in LED driver circuit can effectively manage high current loads and ensure stable current output. Its low on-resistance can improve the efficiency of the driver circuit and reduce heat generation, thereby improving the overall reliability and performance of the system.
5. **Switching power module**:
- In the switching power module, the high current capability and low on-resistance of BUK7Y21-40E-VB make it suitable for handling high power switching requirements. It can improve the performance and reliability of the power module and is widely used in various high-efficiency power supply designs.
1. **High-efficiency switching power supply**:
- The low on-resistance and high current handling capability of BUK7Y21-40E-VB make it excellent in high-efficiency switching power supply applications. It can effectively handle high-power switching requirements, reduce power losses, and improve the overall efficiency of the power system, and is suitable for various high-efficiency power supply designs and converters.
2. **Electric Vehicle (EV) Charging System**:
- In the charging system of electric vehicles, the high current carrying capacity and low on-resistance of this MOSFET can ensure the stability and efficiency of the charging process. It can reduce heat generation during the charging process, improve the safety and performance of the charging system, and is suitable for high-power charging solutions.
3. **Industrial Motor Drive**:
- For industrial motor drive applications that require high current and low on-resistance, BUK7Y21-40E-VB is an ideal choice. It can improve system performance and efficiency in high-power motor control, and is suitable for various motor drives and control systems.
4. **LED driver circuit**:
- The application of BUK7Y21-40E-VB in LED driver circuit can effectively manage high current loads and ensure stable current output. Its low on-resistance can improve the efficiency of the driver circuit and reduce heat generation, thereby improving the overall reliability and performance of the system.
5. **Switching power module**:
- In the switching power module, the high current capability and low on-resistance of BUK7Y21-40E-VB make it suitable for handling high power switching requirements. It can improve the performance and reliability of the power module and is widely used in various high-efficiency power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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