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BUK7Y20-30B-VB Product details
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BUK7Y20-30B-VB MOSFET Product Introduction
BUK7Y20-30B-VB is a high-performance N-channel MOSFET in SOT669 package. The MOSFET has a drain-source voltage (V_DS) of 30V and a gate-source voltage (V_GS) of ±20V, and its threshold voltage (V_th) is 0.8V. BUK7Y20-30B-VB has an extremely low on-state resistance (R_DS(ON)), which is 3.36 mΩ at V_GS of 4.5V and 2.8 mΩ at V_GS of 10V, and supports a continuous leakage current (I_D) of up to 90A. It uses advanced trench technology, has excellent switching performance and low power consumption, and is very suitable for high-efficiency circuit design.
BUK7Y20-30B-VB is a high-performance N-channel MOSFET in SOT669 package. The MOSFET has a drain-source voltage (V_DS) of 30V and a gate-source voltage (V_GS) of ±20V, and its threshold voltage (V_th) is 0.8V. BUK7Y20-30B-VB has an extremely low on-state resistance (R_DS(ON)), which is 3.36 mΩ at V_GS of 4.5V and 2.8 mΩ at V_GS of 10V, and supports a continuous leakage current (I_D) of up to 90A. It uses advanced trench technology, has excellent switching performance and low power consumption, and is very suitable for high-efficiency circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
1. **Package**: SOT669
- This package provides a compact size for space-constrained applications and has good heat dissipation performance.
2. **Configuration**: Single N-channel
- Suitable for applications that require efficient switching control, especially under high current loads.
3. **V_DS (drain-source voltage)**: 30V
- Suitable for applications that handle medium voltages and can operate stably at relatively high voltages.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to meet the control needs of various circuit designs.
5. **V_th (threshold voltage)**: 0.8V
- At this voltage, the MOSFET starts to turn on, suitable for efficient operation at low voltages.
6. **R_DS(ON) (On-state resistance)**:
- 3.36 mΩ @ V_GS = 4.5V
- 2.8 mΩ @ V_GS = 10V
- Extremely low on-state resistance reduces power consumption and improves overall system efficiency.
7. **I_D (Continuous Drain Current)**: 90A
- Supports high current loads and is suitable for circuit designs that handle high currents.
8. **Technology**: Trench
- Provides excellent switching performance and low on-resistance, suitable for high-efficiency circuit designs.
1. **Package**: SOT669
- This package provides a compact size for space-constrained applications and has good heat dissipation performance.
2. **Configuration**: Single N-channel
- Suitable for applications that require efficient switching control, especially under high current loads.
3. **V_DS (drain-source voltage)**: 30V
- Suitable for applications that handle medium voltages and can operate stably at relatively high voltages.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to meet the control needs of various circuit designs.
5. **V_th (threshold voltage)**: 0.8V
- At this voltage, the MOSFET starts to turn on, suitable for efficient operation at low voltages.
6. **R_DS(ON) (On-state resistance)**:
- 3.36 mΩ @ V_GS = 4.5V
- 2.8 mΩ @ V_GS = 10V
- Extremely low on-state resistance reduces power consumption and improves overall system efficiency.
7. **I_D (Continuous Drain Current)**: 90A
- Supports high current loads and is suitable for circuit designs that handle high currents.
8. **Technology**: Trench
- Provides excellent switching performance and low on-resistance, suitable for high-efficiency circuit designs.
Domain and module applications：
Application Examples
**1. Power Management: **
- **Field**: High-efficiency power conversion
- **Example**: In high-efficiency power conversion modules, BUK7Y20-30B-VB can significantly reduce power consumption and improve the overall efficiency of the system through its low on-state resistance and high current handling capability. It is particularly suitable for use in switching power supplies (SMPS) and buck converters.
**2. Electric Vehicles: **
- **Field**: Electric Vehicle Battery Management
- **Example**: In the battery management system of electric vehicles, BUK7Y20-30B-VB can efficiently handle the high current load of the battery, ensuring the stability and high efficiency of the battery. It is suitable for battery switches and motor drive circuits of electric vehicles.
**3. Industrial Automation: **
- **Field**: Industrial Motor Control
- **Example**: In industrial automation systems, BUK7Y20-30B-VB provides efficient switch control and can handle large current loads. It is suitable for motor drive and control systems to ensure stable operation and efficient operation of the equipment.
**4. Consumer Electronics: **
- **Field**: Portable Electronic Devices
- **Example**: In the power management module of portable electronic devices (such as laptops and smartphones), BUK7Y20-30B-VB can provide efficient power switch control, reduce power consumption, and improve the endurance of the device.
**5. Solar Inverter: **
- **Field**: Renewable Energy
- **Example**: In solar inverters, BUK7Y20-30B-VB can efficiently handle the current output of solar panels, ensure efficient energy conversion, and is suitable for switch control in solar systems.
The low on-state resistance and high current carrying capability of the BUK7Y20-30B-VB MOSFET make it an ideal choice for high-efficiency power management, electric vehicles, industrial control and many other fields.
**1. Power Management: **
- **Field**: High-efficiency power conversion
- **Example**: In high-efficiency power conversion modules, BUK7Y20-30B-VB can significantly reduce power consumption and improve the overall efficiency of the system through its low on-state resistance and high current handling capability. It is particularly suitable for use in switching power supplies (SMPS) and buck converters.
**2. Electric Vehicles: **
- **Field**: Electric Vehicle Battery Management
- **Example**: In the battery management system of electric vehicles, BUK7Y20-30B-VB can efficiently handle the high current load of the battery, ensuring the stability and high efficiency of the battery. It is suitable for battery switches and motor drive circuits of electric vehicles.
**3. Industrial Automation: **
- **Field**: Industrial Motor Control
- **Example**: In industrial automation systems, BUK7Y20-30B-VB provides efficient switch control and can handle large current loads. It is suitable for motor drive and control systems to ensure stable operation and efficient operation of the equipment.
**4. Consumer Electronics: **
- **Field**: Portable Electronic Devices
- **Example**: In the power management module of portable electronic devices (such as laptops and smartphones), BUK7Y20-30B-VB can provide efficient power switch control, reduce power consumption, and improve the endurance of the device.
**5. Solar Inverter: **
- **Field**: Renewable Energy
- **Example**: In solar inverters, BUK7Y20-30B-VB can efficiently handle the current output of solar panels, ensure efficient energy conversion, and is suitable for switch control in solar systems.
The low on-state resistance and high current carrying capability of the BUK7Y20-30B-VB MOSFET make it an ideal choice for high-efficiency power management, electric vehicles, industrial control and many other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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