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BUK7Y18-55B-VB Product details
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Product Introduction
BUK7Y18-55B-VB is a high-performance single N-channel MOSFET in a SOT669 package. The device supports drain-source voltage (VDS) up to 60V and gate-source voltage (VGS) of ±20V, and its threshold voltage (Vth) is between 1V and 3V. At VGS of 4.5V, its on-resistance (RDS(ON)) is 7.8mΩ, and at VGS of 10V it is 6.2mΩ, supporting a continuous drain current (ID) of up to 64A. BUK7Y18-55B-VB uses Trench technology, providing low conduction losses and excellent switching performance, making it ideal for high current and high efficiency applications.
BUK7Y18-55B-VB is a high-performance single N-channel MOSFET in a SOT669 package. The device supports drain-source voltage (VDS) up to 60V and gate-source voltage (VGS) of ±20V, and its threshold voltage (Vth) is between 1V and 3V. At VGS of 4.5V, its on-resistance (RDS(ON)) is 7.8mΩ, and at VGS of 10V it is 6.2mΩ, supporting a continuous drain current (ID) of up to 64A. BUK7Y18-55B-VB uses Trench technology, providing low conduction losses and excellent switching performance, making it ideal for high current and high efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | 6.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK7Y18-55B-VB
- **Package type**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1V ~ 3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Drain current (ID)**: 64A
- **Technology**: Trench
- **Model**: BUK7Y18-55B-VB
- **Package type**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1V ~ 3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Drain current (ID)**: 64A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**
BUK7Y18-55B-VB is very suitable for high-efficiency power management modules such as DC-DC converters and power switches. In these applications, its low on-resistance and high current handling capability can significantly reduce power loss, improve the overall efficiency and stability of the system, and is suitable for power management of various electronic devices.
2. **Electric vehicles**
In the power management system of electric vehicles, BUK7Y18-55B-VB is able to handle high current loads and maintain low conduction losses under high load conditions. This makes it suitable for battery management systems (BMS), electric drive systems, and battery charging control modules to ensure the efficiency and reliability of electric vehicle systems.
3. **Industrial control**
This MOSFET is also widely used in industrial automation, such as motor drives and servo control systems. Its high current carrying capacity and low on-resistance ensure the stable operation of industrial equipment under high load conditions, improving the performance and reliability of the system.
4. **High-power LED lighting**
In high-power LED lighting applications, BUK7Y18-55B-VB can effectively control the LED current, improve the brightness and energy efficiency of the lighting system. Its low on-resistance helps reduce energy loss, extend the life of the LED, and provide stable lighting effects.
These application examples show the wide applicability of BUK7Y18-55B-VB in high-current and high-efficiency applications. Its excellent electrical characteristics make it an ideal choice for a variety of critical applications.
1. **Power management**
BUK7Y18-55B-VB is very suitable for high-efficiency power management modules such as DC-DC converters and power switches. In these applications, its low on-resistance and high current handling capability can significantly reduce power loss, improve the overall efficiency and stability of the system, and is suitable for power management of various electronic devices.
2. **Electric vehicles**
In the power management system of electric vehicles, BUK7Y18-55B-VB is able to handle high current loads and maintain low conduction losses under high load conditions. This makes it suitable for battery management systems (BMS), electric drive systems, and battery charging control modules to ensure the efficiency and reliability of electric vehicle systems.
3. **Industrial control**
This MOSFET is also widely used in industrial automation, such as motor drives and servo control systems. Its high current carrying capacity and low on-resistance ensure the stable operation of industrial equipment under high load conditions, improving the performance and reliability of the system.
4. **High-power LED lighting**
In high-power LED lighting applications, BUK7Y18-55B-VB can effectively control the LED current, improve the brightness and energy efficiency of the lighting system. Its low on-resistance helps reduce energy loss, extend the life of the LED, and provide stable lighting effects.
These application examples show the wide applicability of BUK7Y18-55B-VB in high-current and high-efficiency applications. Its excellent electrical characteristics make it an ideal choice for a variety of critical applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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