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BUK7Y153-100E-VB Product details
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Product Overview: BUK7Y153-100E-VB
BUK7Y153-100E-VB is a high-performance unipolar N-channel MOSFET in SOT669 package, designed for high voltage and high current applications. It has a drain-source voltage (V_DS) of 100V and a gate-source voltage (V_GS) of 20V (±V), a threshold voltage (V_th) of 1.4V, an on-resistance (R_DS(on)) of 13.92mΩ @ V_GS = 4.5V and 11.6mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of 69A. The MOSFET adopts Trench technology, has excellent switching performance and low conduction loss, and is suitable for high-efficiency power supply and current control applications.
BUK7Y153-100E-VB is a high-performance unipolar N-channel MOSFET in SOT669 package, designed for high voltage and high current applications. It has a drain-source voltage (V_DS) of 100V and a gate-source voltage (V_GS) of 20V (±V), a threshold voltage (V_th) of 1.4V, an on-resistance (R_DS(on)) of 13.92mΩ @ V_GS = 4.5V and 11.6mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of 69A. The MOSFET adopts Trench technology, has excellent switching performance and low conduction loss, and is suitable for high-efficiency power supply and current control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Drain-Source Voltage (V_DS):** 100V
- The maximum voltage that can be applied between the drain and the source.
- **Gate-Source Voltage (V_GS):** 20V (±V)
- The maximum voltage that can be applied between the gate and the source.
- **Threshold Voltage (V_th):** 1.4V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 13.92mΩ @ V_GS = 4.5V
- The resistance between the drain and the source when the MOSFET is in the "on" state, measured when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 11.6mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the “on” state, measured when the gate-source voltage is 10V.
- **Continuous drain current (I_D):** 69A
- The maximum continuous current that can flow through the drain terminal when the device is properly heatsinked.
- **Package type:** SOT669
- The physical package of the MOSFET, which provides good thermal performance and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that this MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.
- **Drain-Source Voltage (V_DS):** 100V
- The maximum voltage that can be applied between the drain and the source.
- **Gate-Source Voltage (V_GS):** 20V (±V)
- The maximum voltage that can be applied between the gate and the source.
- **Threshold Voltage (V_th):** 1.4V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 13.92mΩ @ V_GS = 4.5V
- The resistance between the drain and the source when the MOSFET is in the "on" state, measured when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 11.6mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the “on” state, measured when the gate-source voltage is 10V.
- **Continuous drain current (I_D):** 69A
- The maximum continuous current that can flow through the drain terminal when the device is properly heatsinked.
- **Package type:** SOT669
- The physical package of the MOSFET, which provides good thermal performance and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that this MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.
Domain and module applications：
Application Examples
**1. Efficient Power Management: **
- BUK7Y153-100E-VB MOSFET excels in efficient power management systems. Its low on-resistance and high current handling capability make it ideal for use in high voltage DC-DC converters and switch mode power supplies (SMPS), improving the overall efficiency of the power supply and reducing energy losses.
**2. Battery Management System (BMS): **
- This MOSFET is suitable for switching and protection functions in battery management systems, especially in application scenarios that require high current and high voltage protection. Its high current capability and low on-resistance ensure efficient battery charging and discharging processes, suitable for electric vehicles, portable electronic devices, and industrial battery systems.
**3. Load Switch: **
- In load switch applications, BUK7Y153-100E-VB MOSFET provides reliable high voltage and high current switching functions. Suitable for load switches in various electronic devices, such as home appliances, computer power supplies, and industrial control equipment.
**4. Motor Drive:**
- This MOSFET performs well in motor drive systems and is suitable for controlling motors in electric vehicles, power tools, and home appliances. Its high voltage and high current handling capabilities ensure efficient operation and good control performance of the motor.
**5. Automotive Electronics:**
- BUK7Y153-100E-VB can be used in a variety of applications in automotive electronic systems, including power seat adjustment, light switching, and power distribution. Its excellent switching performance and high current capability ensure the stability and efficiency of automotive electronic systems.
By applying the BUK7Y153-100E-VB MOSFET to these fields, designers can achieve efficient and reliable performance that meets the requirements of high voltage, high current, and excellent switching characteristics, making it an ideal choice for modern high-power electronic systems.
**1. Efficient Power Management: **
- BUK7Y153-100E-VB MOSFET excels in efficient power management systems. Its low on-resistance and high current handling capability make it ideal for use in high voltage DC-DC converters and switch mode power supplies (SMPS), improving the overall efficiency of the power supply and reducing energy losses.
**2. Battery Management System (BMS): **
- This MOSFET is suitable for switching and protection functions in battery management systems, especially in application scenarios that require high current and high voltage protection. Its high current capability and low on-resistance ensure efficient battery charging and discharging processes, suitable for electric vehicles, portable electronic devices, and industrial battery systems.
**3. Load Switch: **
- In load switch applications, BUK7Y153-100E-VB MOSFET provides reliable high voltage and high current switching functions. Suitable for load switches in various electronic devices, such as home appliances, computer power supplies, and industrial control equipment.
**4. Motor Drive:**
- This MOSFET performs well in motor drive systems and is suitable for controlling motors in electric vehicles, power tools, and home appliances. Its high voltage and high current handling capabilities ensure efficient operation and good control performance of the motor.
**5. Automotive Electronics:**
- BUK7Y153-100E-VB can be used in a variety of applications in automotive electronic systems, including power seat adjustment, light switching, and power distribution. Its excellent switching performance and high current capability ensure the stability and efficiency of automotive electronic systems.
By applying the BUK7Y153-100E-VB MOSFET to these fields, designers can achieve efficient and reliable performance that meets the requirements of high voltage, high current, and excellent switching characteristics, making it an ideal choice for modern high-power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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