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BUK7Y12-55B-VB Product details
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Product Introduction
BUK7Y12-55B-VB is a high-performance N-channel MOSFET using Trench technology in SOT669 package. This MOSFET is designed for high-efficiency and high-power applications with excellent electrical performance and high reliability. Its maximum drain-source voltage (VDS) is 60V and its maximum drain current (ID) is 64A. The low on-resistance (RDS(ON)) is 7.8mΩ at VGS=4.5V and drops to 6.2mΩ at VGS=10V, ensuring efficient power conversion and low-power operation, making it ideal for a variety of electronic devices and power management systems.
BUK7Y12-55B-VB is a high-performance N-channel MOSFET using Trench technology in SOT669 package. This MOSFET is designed for high-efficiency and high-power applications with excellent electrical performance and high reliability. Its maximum drain-source voltage (VDS) is 60V and its maximum drain current (ID) is 64A. The low on-resistance (RDS(ON)) is 7.8mΩ at VGS=4.5V and drops to 6.2mΩ at VGS=10V, ensuring efficient power conversion and low-power operation, making it ideal for a variety of electronic devices and power management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | 6.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 60V | 1~3V | 64A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1~3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Drain current (ID)**: 64A
- **Technology**: Trench
- **Other key parameters**:
- **Power dissipation (Ptot)**: Typical value is 3.6W
- **Junction-to-ambient thermal resistance (RθJA)**: Maximum value is 60°C/W
- **Junction to case thermal resistance (RθJC)**: 4.5°C/W maximum
- **Operating temperature range (Tj)**: -55°C to +175°C
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1~3V
- **On-resistance (RDS(ON))**:
- 7.8mΩ @ VGS=4.5V
- 6.2mΩ @ VGS=10V
- **Drain current (ID)**: 64A
- **Technology**: Trench
- **Other key parameters**:
- **Power dissipation (Ptot)**: Typical value is 3.6W
- **Junction-to-ambient thermal resistance (RθJA)**: Maximum value is 60°C/W
- **Junction to case thermal resistance (RθJC)**: 4.5°C/W maximum
- **Operating temperature range (Tj)**: -55°C to +175°C
Domain and module applications：
Application fields and module examples
BUK7Y12-55B-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some major application examples:
1. **Power management system**: In the power management system, BUK7Y12-55B-VB MOSFET is used to efficiently control power switching and current flow, ensuring the efficiency and stability of power conversion.
2. **Automotive electronics**: In automotive electronic systems, such as battery management systems and motor control modules, this MOSFET is able to handle high currents and provide reliable switching functions, ensuring the high efficiency and safety of automotive electronic systems.
3. **Portable electronic devices**: In portable electronic devices, such as smartphones, tablets, etc., BUK7Y12-55B-VB MOSFET is used for efficient power switching and current control to optimize the energy consumption and performance of the device.
4. **Industrial Control Systems**: In industrial automation and control systems, this MOSFET is used to drive high-power loads and control current flow, providing stable performance and efficient power conversion.
5. **Efficient Battery Management**: In battery management systems, this MOSFET is used to control current flow during charging and discharging, optimizing battery performance and extending its life.
The BUK7Y12-55B-VB MOSFET is an ideal choice for a variety of high-performance, high-power applications due to its high current carrying capacity, low on-resistance and high efficiency.
BUK7Y12-55B-VB MOSFET has a wide range of applications in multiple fields and modules. Here are some major application examples:
1. **Power management system**: In the power management system, BUK7Y12-55B-VB MOSFET is used to efficiently control power switching and current flow, ensuring the efficiency and stability of power conversion.
2. **Automotive electronics**: In automotive electronic systems, such as battery management systems and motor control modules, this MOSFET is able to handle high currents and provide reliable switching functions, ensuring the high efficiency and safety of automotive electronic systems.
3. **Portable electronic devices**: In portable electronic devices, such as smartphones, tablets, etc., BUK7Y12-55B-VB MOSFET is used for efficient power switching and current control to optimize the energy consumption and performance of the device.
4. **Industrial Control Systems**: In industrial automation and control systems, this MOSFET is used to drive high-power loads and control current flow, providing stable performance and efficient power conversion.
5. **Efficient Battery Management**: In battery management systems, this MOSFET is used to control current flow during charging and discharging, optimizing battery performance and extending its life.
The BUK7Y12-55B-VB MOSFET is an ideal choice for a variety of high-performance, high-power applications due to its high current carrying capacity, low on-resistance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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