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BUK7Y12-40E-VB Product details
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BUK7Y12-40E-VB MOSFET Product Introduction
BUK7Y12-40E-VB is a single N-channel MOSFET in SOT669 package. This MOSFET uses Trench technology with a maximum drain-source voltage (VDS) of 40V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.4V. At a gate-source voltage of 4.5V, its on-resistance (RDS(ON)) is 2.4mΩ, while at a gate-source voltage of 10V, RDS(ON) drops to 2mΩ. BUK7Y12-40E-VB is capable of carrying a continuous drain current (ID) of up to 100A.
BUK7Y12-40E-VB is a single N-channel MOSFET in SOT669 package. This MOSFET uses Trench technology with a maximum drain-source voltage (VDS) of 40V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.4V. At a gate-source voltage of 4.5V, its on-resistance (RDS(ON)) is 2.4mΩ, while at a gate-source voltage of 10V, RDS(ON) drops to 2mΩ. BUK7Y12-40E-VB is capable of carrying a continuous drain current (ID) of up to 100A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 40V | 1.4V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
- **Package type**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 2.4mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Application Examples
1. **High-efficiency switching power supply**:
- BUK7Y12-40E-VB has very low on-resistance and high current handling capability, making it very effective in high-efficiency switching power supply applications. It enables efficient current switching in switching power supply modules, reduces power losses, and improves the overall efficiency of the power system.
2. **Electric Vehicle (EV) Charging System**:
- In electric vehicle charging systems, the high current carrying capacity and low on-resistance of this MOSFET ensure a stable and efficient charging process. It can reduce the heat generated during the charging process and improve the safety and performance of the charging system.
3. **Industrial Motor Drive**:
- BUK7Y12-40E-VB is suitable for use in industrial motor drive systems, especially those that require high current and low on-resistance. It can improve the performance and efficiency of motor control systems and is suitable for a variety of high-power motor drive and control needs.
4. **Switching Power Module**:
- In a switching power module, the BUK7Y12-40E-VB's low on-resistance and high current handling capability make it an ideal switching element. It can handle high power switching requirements, improving the performance and reliability of the power module.
5. **LED Drive Circuit**:
- For LED drive circuits, this MOSFET can effectively manage high current loads and ensure stable current output. Its low on-resistance can improve the efficiency of the drive circuit, reduce heat generation, and improve the overall reliability and performance of the system.
1. **High-efficiency switching power supply**:
- BUK7Y12-40E-VB has very low on-resistance and high current handling capability, making it very effective in high-efficiency switching power supply applications. It enables efficient current switching in switching power supply modules, reduces power losses, and improves the overall efficiency of the power system.
2. **Electric Vehicle (EV) Charging System**:
- In electric vehicle charging systems, the high current carrying capacity and low on-resistance of this MOSFET ensure a stable and efficient charging process. It can reduce the heat generated during the charging process and improve the safety and performance of the charging system.
3. **Industrial Motor Drive**:
- BUK7Y12-40E-VB is suitable for use in industrial motor drive systems, especially those that require high current and low on-resistance. It can improve the performance and efficiency of motor control systems and is suitable for a variety of high-power motor drive and control needs.
4. **Switching Power Module**:
- In a switching power module, the BUK7Y12-40E-VB's low on-resistance and high current handling capability make it an ideal switching element. It can handle high power switching requirements, improving the performance and reliability of the power module.
5. **LED Drive Circuit**:
- For LED drive circuits, this MOSFET can effectively manage high current loads and ensure stable current output. Its low on-resistance can improve the efficiency of the drive circuit, reduce heat generation, and improve the overall reliability and performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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