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BUK7Y12-100E-VB Product details
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BUK7Y12-100E-VB MOSFET Product Introduction
BUK7Y12-100E-VB is a high-performance N-channel MOSFET in SOT669 package. With a drain-source voltage (V_DS) of 100V and a gate-source voltage (V_GS) of ±20V, this MOSFET is suitable for applications requiring medium-to-high voltage and high current. Its threshold voltage (V_th) is 1.4V, and its on-state resistance (R_DS(ON)) is 13.92 mΩ at V_GS of 4.5V and 11.6 mΩ at V_GS of 10V, supporting a continuous drain current (I_D) of up to 69A. BUK7Y12-100E-VB adopts advanced trench technology, has excellent switching performance and low power consumption, and is suitable for various high-efficiency circuit designs.
BUK7Y12-100E-VB is a high-performance N-channel MOSFET in SOT669 package. With a drain-source voltage (V_DS) of 100V and a gate-source voltage (V_GS) of ±20V, this MOSFET is suitable for applications requiring medium-to-high voltage and high current. Its threshold voltage (V_th) is 1.4V, and its on-state resistance (R_DS(ON)) is 13.92 mΩ at V_GS of 4.5V and 11.6 mΩ at V_GS of 10V, supporting a continuous drain current (I_D) of up to 69A. BUK7Y12-100E-VB adopts advanced trench technology, has excellent switching performance and low power consumption, and is suitable for various high-efficiency circuit designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
1. **Package**: SOT669
- This package provides compact size and good heat dissipation, which is very suitable for space-constrained application scenarios.
2. **Configuration**: Single N-channel
- Suitable for efficient switch control, especially in applications requiring high current and medium-to-high voltage.
3. **V_DS (drain-source voltage)**: 100V
- Suitable for medium-to-high voltage applications, capable of handling higher voltage loads while maintaining high reliability.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to meet the control requirements of different circuit designs.
5. **V_th (threshold voltage)**: 1.4V
- At this voltage, the MOSFET starts to turn on, ensuring efficient operation at low voltage.
6. **R_DS(ON) (On-state resistance)**:
- 13.92 mΩ @ V_GS = 4.5V
- 11.6 mΩ @ V_GS = 10V
- Low on-state resistance reduces power consumption and improves overall circuit efficiency, suitable for high current applications.
7. **I_D (Continuous Drain Current)**: 69A
- Supports high current loads, suitable for circuit designs that require high current handling.
8. **Technology**: Trench
- Provides excellent switching performance and low on-resistance, suitable for high-efficiency circuit designs.
1. **Package**: SOT669
- This package provides compact size and good heat dissipation, which is very suitable for space-constrained application scenarios.
2. **Configuration**: Single N-channel
- Suitable for efficient switch control, especially in applications requiring high current and medium-to-high voltage.
3. **V_DS (drain-source voltage)**: 100V
- Suitable for medium-to-high voltage applications, capable of handling higher voltage loads while maintaining high reliability.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to meet the control requirements of different circuit designs.
5. **V_th (threshold voltage)**: 1.4V
- At this voltage, the MOSFET starts to turn on, ensuring efficient operation at low voltage.
6. **R_DS(ON) (On-state resistance)**:
- 13.92 mΩ @ V_GS = 4.5V
- 11.6 mΩ @ V_GS = 10V
- Low on-state resistance reduces power consumption and improves overall circuit efficiency, suitable for high current applications.
7. **I_D (Continuous Drain Current)**: 69A
- Supports high current loads, suitable for circuit designs that require high current handling.
8. **Technology**: Trench
- Provides excellent switching performance and low on-resistance, suitable for high-efficiency circuit designs.
Domain and module applications：
Application Examples
**1. Switching Power Supply: **
- **Field**: High-efficiency Switching Power Supply (SMPS)
- **Example**: In high-efficiency switching power supply modules, BUK7Y12-100E-VB can effectively reduce power consumption and improve the overall efficiency of the system through its low on-state resistance and high current handling capability, and is suitable for various power supply designs that require high performance and high current handling.
**2. Electric Vehicles: **
- **Field**: Electric Vehicle Battery Management System
- **Example**: In the battery management system of electric vehicles, BUK7Y12-100E-VB provides high-current switching control, which can handle the high current load of the battery, ensure the stable operation and high efficiency of the battery, and is suitable for battery management and motor drive systems of electric vehicles.
**3. Data Center Power Supply: **
- **Field**: Data Center and Server Power Supply
- **Example**: In the power supply module of the data center, BUK7Y12-100E-VB can handle high current loads and ensure the stability and efficiency of the server power supply. Its low on-resistance and high current carrying capacity make it an ideal choice for data center power management.
**4. Industrial Automation: **
- **Field**: Industrial Motor Drive
- **Example**: In the motor drive circuit of the industrial automation system, BUK7Y12-100E-VB provides efficient switch control, can handle high current loads, and ensure the stable operation of the motor. It is suitable for various industrial motor control applications that require high current and high efficiency.
**5. Solar Inverter: **
- **Field**: Renewable Energy
- **Example**: In solar inverters, BUK7Y12-100E-VB can effectively handle the current output of solar panels, ensuring efficient and stable energy conversion. Its excellent switching performance and high current carrying capacity make it suitable for the design of solar inverters.
BUK7Y12-100E-VB MOSFET is a medium-to-high voltage, high-current switching device, widely used in high-efficiency power supplies, electric vehicles, industrial automation and other fields. Its low on-resistance and high current carrying capacity make it play an important role in many high-performance circuit designs.
**1. Switching Power Supply: **
- **Field**: High-efficiency Switching Power Supply (SMPS)
- **Example**: In high-efficiency switching power supply modules, BUK7Y12-100E-VB can effectively reduce power consumption and improve the overall efficiency of the system through its low on-state resistance and high current handling capability, and is suitable for various power supply designs that require high performance and high current handling.
**2. Electric Vehicles: **
- **Field**: Electric Vehicle Battery Management System
- **Example**: In the battery management system of electric vehicles, BUK7Y12-100E-VB provides high-current switching control, which can handle the high current load of the battery, ensure the stable operation and high efficiency of the battery, and is suitable for battery management and motor drive systems of electric vehicles.
**3. Data Center Power Supply: **
- **Field**: Data Center and Server Power Supply
- **Example**: In the power supply module of the data center, BUK7Y12-100E-VB can handle high current loads and ensure the stability and efficiency of the server power supply. Its low on-resistance and high current carrying capacity make it an ideal choice for data center power management.
**4. Industrial Automation: **
- **Field**: Industrial Motor Drive
- **Example**: In the motor drive circuit of the industrial automation system, BUK7Y12-100E-VB provides efficient switch control, can handle high current loads, and ensure the stable operation of the motor. It is suitable for various industrial motor control applications that require high current and high efficiency.
**5. Solar Inverter: **
- **Field**: Renewable Energy
- **Example**: In solar inverters, BUK7Y12-100E-VB can effectively handle the current output of solar panels, ensuring efficient and stable energy conversion. Its excellent switching performance and high current carrying capacity make it suitable for the design of solar inverters.
BUK7Y12-100E-VB MOSFET is a medium-to-high voltage, high-current switching device, widely used in high-efficiency power supplies, electric vehicles, industrial automation and other fields. Its low on-resistance and high current carrying capacity make it play an important role in many high-performance circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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