BUK7Y113-100E-VB Product details
Product introduction:
BUK7Y113-100E-VB is a high-performance single N-channel MOSFET in SOT669 package. This MOSFET is designed for high voltage and high current applications and can withstand a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.4V, and the on-resistance (RDS(ON)) is 13.92mΩ at VGS = 4.5V, while at VGS = 10V, the on-resistance drops to 11.6mΩ, supporting a continuous drain current (ID) of up to 69A. Using Trench technology, BUK7Y113-100E-VB provides an efficient, low-power power switching solution for a variety of application scenarios requiring high current and low on-resistance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | 11.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 100V | 1.4V | 69A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
- **Package**: SOT669
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.4V
- **On-resistance (RDS(ON))**:
- 13.92mΩ @ VGS = 4.5V
- 11.6mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 69A
- **Technology**: Trench
Domain and module applications:
1. **High Power DC-DC Converter**:
BUK7Y113-100E-VB is suitable for high power DC-DC converters, providing stable switching performance under high voltage and high current conditions. Its low on-resistance helps improve conversion efficiency and reduce energy loss, making it an excellent performer in high power power management and conversion applications.
2. **Motor Drive System**:
In the motor drive system, BUK7Y113-100E-VB provides sufficient current handling capability and efficient switching performance, suitable for controlling high current motors, ensuring smooth operation of the motor and efficient control of the system.
3. **Battery Management System**:
This MOSFET can be used to manage the charging and discharging process of the battery in the battery management system, especially in high voltage and high current battery packs. Its high current handling capability and low on-resistance help improve the overall efficiency and safety of the battery system.
4. **High-power LED driver**:
In high-power LED driver applications, the low on-resistance and high current handling capability of BUK7Y113-100E-VB can provide an efficient driving solution to ensure stable operation and efficient lighting of LED systems.
5. **Power switch application**:
BUK7Y113-100E-VB is also suitable for various power switch applications. Its high voltage and high current capabilities make it excellent in high-power power control, improving the stability and reliability of the system.
6. **Industrial power management**:
In industrial power management systems, this MOSFET can handle high voltage and high current requirements, suitable for high-power power control and regulation, and improve the performance and reliability of the system.
The excellent performance of BUK7Y113-100E-VB MOSFET enables it to provide efficient and stable power control and management in multiple high voltage and high current applications, meeting the needs of high power and high load.
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