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BUK7Y10-30B-VB Product details
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Product Introduction
BUK7Y10-30B-VB is a high-performance single N-channel MOSFET in a SOT669 package. The device supports drain-source voltage (VDS) up to 30V and gate-source voltage (VGS) of ±20V, with a threshold voltage (Vth) of 0.8V. At VGS of 4.5V, its on-resistance (RDS(ON)) is 3.36mΩ, and at VGS of 10V it is 2.8mΩ, and supports a continuous drain current (ID) of up to 90A. BUK7Y10-30B-VB uses Trench technology, providing low conduction losses and excellent switching performance, making it ideal for a variety of high current and high efficiency application scenarios.
BUK7Y10-30B-VB is a high-performance single N-channel MOSFET in a SOT669 package. The device supports drain-source voltage (VDS) up to 30V and gate-source voltage (VGS) of ±20V, with a threshold voltage (Vth) of 0.8V. At VGS of 4.5V, its on-resistance (RDS(ON)) is 3.36mΩ, and at VGS of 10V it is 2.8mΩ, and supports a continuous drain current (ID) of up to 90A. BUK7Y10-30B-VB uses Trench technology, providing low conduction losses and excellent switching performance, making it ideal for a variety of high current and high efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT669 | Single-N | 30V | 0.8V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT669 | Single-N |
Detailed parameter description
- **Model**: BUK7Y10-30B-VB
- **Package type**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
- **Model**: BUK7Y10-30B-VB
- **Package type**: SOT669
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 3.36mΩ @ VGS=4.5V
- 2.8mΩ @ VGS=10V
- **Drain current (ID)**: 90A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High-efficiency power conversion**
BUK7Y10-30B-VB is suitable for high-efficiency DC-DC converters and power switches. Its low on-resistance and high current handling capability can significantly reduce power loss and improve conversion efficiency, especially in applications that require high-frequency switching, such as server power supplies and high-performance computing equipment.
2. **Electric vehicles**
In the power management system of electric vehicles, BUK7Y10-30B-VB is able to handle high current loads and maintain low conduction losses under high load conditions. It is suitable for battery management systems (BMS), electric drive systems, and battery charging control, ensuring the efficiency and reliability of electric vehicle systems.
3. **Industrial drive systems**
This MOSFET is ideal for high-current drive applications in industrial automation, such as motor drives and servo systems. Its high current carrying capacity and low on-resistance ensure stable operation of equipment under high load conditions, improving the overall performance and efficiency of the system.
4. **Intelligent Power Module**
Among various intelligent power modules, BUK7Y10-30B-VB can effectively manage high current loads and achieve efficient energy conversion. Its excellent switching performance and low on-resistance make it excellent in situations requiring high current and high efficiency, such as power protection and current switching applications.
These application examples demonstrate the wide applicability of BUK7Y10-30B-VB in situations requiring high current and high efficiency, and its excellent electrical characteristics make it an ideal choice for various critical applications.
1. **High-efficiency power conversion**
BUK7Y10-30B-VB is suitable for high-efficiency DC-DC converters and power switches. Its low on-resistance and high current handling capability can significantly reduce power loss and improve conversion efficiency, especially in applications that require high-frequency switching, such as server power supplies and high-performance computing equipment.
2. **Electric vehicles**
In the power management system of electric vehicles, BUK7Y10-30B-VB is able to handle high current loads and maintain low conduction losses under high load conditions. It is suitable for battery management systems (BMS), electric drive systems, and battery charging control, ensuring the efficiency and reliability of electric vehicle systems.
3. **Industrial drive systems**
This MOSFET is ideal for high-current drive applications in industrial automation, such as motor drives and servo systems. Its high current carrying capacity and low on-resistance ensure stable operation of equipment under high load conditions, improving the overall performance and efficiency of the system.
4. **Intelligent Power Module**
Among various intelligent power modules, BUK7Y10-30B-VB can effectively manage high current loads and achieve efficient energy conversion. Its excellent switching performance and low on-resistance make it excellent in situations requiring high current and high efficiency, such as power protection and current switching applications.
These application examples demonstrate the wide applicability of BUK7Y10-30B-VB in situations requiring high current and high efficiency, and its excellent electrical characteristics make it an ideal choice for various critical applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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