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BUK7E2R7-30B-VB Product details
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BUK7E2R7-30B-VB Product Overview
BUK7E2R7-30B-VB is a high-performance N-channel MOSFET in a TO262 package. Designed to handle high current and high power applications, the device features a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 1.7V. It uses Trench technology, has extremely low on-resistance and excellent current handling capabilities, and is suitable for use in high-performance electronic devices and modules.
BUK7E2R7-30B-VB is a high-performance N-channel MOSFET in a TO262 package. Designed to handle high current and high power applications, the device features a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) tolerance of ±20V, and a threshold voltage (Vth) of 1.7V. It uses Trench technology, has extremely low on-resistance and excellent current handling capabilities, and is suitable for use in high-performance electronic devices and modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package**: TO262
- **Configuration**: Single-stage N-type
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.24mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO262
- **Configuration**: Single-stage N-type
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.24mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application Examples
1. **High-efficiency power switch**: The BUK7E2R7-30B-VB is ideal for high-efficiency power switching applications such as DC-DC converters and AC-DC power adapters. Its extremely low on-resistance and high current capability ensure efficient power conversion and reduce power losses, thereby improving the overall efficiency and performance of the system.
2. **Motor drive system**: In power tools, electric vehicles, and industrial automation equipment, the BUK7E2R7-30B-VB provides strong current handling capabilities and stable switching performance, which can effectively control high-current loads and meet various high-power requirements.
3. **Load switch**: In load switch applications, such as data center power supplies and battery-powered equipment, the BUK7E2R7-30B-VB can efficiently handle and switch high-current loads, ensuring system stability and reliability.
4. **Inverter and Uninterruptible Power Supply (UPS)**: This MOSFET is suitable for inverter and UPS systems and can stably handle high power loads. Its excellent thermal management and low on-resistance performance help improve the overall efficiency and reliability of the system, ensuring efficient operation during power conversion.
5. **High-power Audio Amplifier**: In high-power audio amplifier applications, the BUK7E2R7-30B-VB provides stable switching performance and low on-resistance, reducing signal distortion and heat generation, and achieving clear audio output.
These application examples demonstrate the wide applicability of the BUK7E2R7-30B-VB in the fields of high power and high efficiency, reflecting its important role in modern electronic design.
1. **High-efficiency power switch**: The BUK7E2R7-30B-VB is ideal for high-efficiency power switching applications such as DC-DC converters and AC-DC power adapters. Its extremely low on-resistance and high current capability ensure efficient power conversion and reduce power losses, thereby improving the overall efficiency and performance of the system.
2. **Motor drive system**: In power tools, electric vehicles, and industrial automation equipment, the BUK7E2R7-30B-VB provides strong current handling capabilities and stable switching performance, which can effectively control high-current loads and meet various high-power requirements.
3. **Load switch**: In load switch applications, such as data center power supplies and battery-powered equipment, the BUK7E2R7-30B-VB can efficiently handle and switch high-current loads, ensuring system stability and reliability.
4. **Inverter and Uninterruptible Power Supply (UPS)**: This MOSFET is suitable for inverter and UPS systems and can stably handle high power loads. Its excellent thermal management and low on-resistance performance help improve the overall efficiency and reliability of the system, ensuring efficient operation during power conversion.
5. **High-power Audio Amplifier**: In high-power audio amplifier applications, the BUK7E2R7-30B-VB provides stable switching performance and low on-resistance, reducing signal distortion and heat generation, and achieving clear audio output.
These application examples demonstrate the wide applicability of the BUK7E2R7-30B-VB in the fields of high power and high efficiency, reflecting its important role in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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