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BUK7E2R3-40C-VB Product details
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Product Introduction
BUK7E2R3-40C-VB is a high-performance N-channel MOSFET with advanced Trench technology and packaged in TO262. This MOSFET has high current carrying capacity and ultra-low on-resistance, making it ideal for high-efficiency, high-power applications. Its maximum drain-source voltage (VDS) is 40V and its maximum drain current (ID) is 150A, enabling stable operation under harsh operating conditions. The low on-resistance (RDS(ON)) is 1.7mΩ @ VGS=10V, ensuring excellent power conversion efficiency and low power consumption.
BUK7E2R3-40C-VB is a high-performance N-channel MOSFET with advanced Trench technology and packaged in TO262. This MOSFET has high current carrying capacity and ultra-low on-resistance, making it ideal for high-efficiency, high-power applications. Its maximum drain-source voltage (VDS) is 40V and its maximum drain current (ID) is 150A, enabling stable operation under harsh operating conditions. The low on-resistance (RDS(ON)) is 1.7mΩ @ VGS=10V, ensuring excellent power conversion efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | 1.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1.7mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Other key parameters**:
- **Power dissipation (Ptot)**: Typical value is 150W
- **Junction-to-ambient thermal resistance (RθJA)**: Maximum value is 62.5°C/W
- **Junction-to-case thermal resistance (RθJC)**: Maximum value is 1.2°C/W
- **Operating temperature range (Tj)**: -55°C Up to +175°C
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.3V
- **On-resistance (RDS(ON))**: 1.7mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Other key parameters**:
- **Power dissipation (Ptot)**: Typical value is 150W
- **Junction-to-ambient thermal resistance (RθJA)**: Maximum value is 62.5°C/W
- **Junction-to-case thermal resistance (RθJC)**: Maximum value is 1.2°C/W
- **Operating temperature range (Tj)**: -55°C Up to +175°C
Domain and module applications：
Applications and module examples
BUK7E2R3-40C-VB MOSFET performs well in multiple high-power and high-efficiency applications. Here are some key application examples:
1. **Power converters and switching power supplies**: In power converters and switching power supplies, the low on-resistance and high current capability of the BUK7E2R3-40C-VB MOSFET ensure efficient power conversion and minimal power loss, making it suitable for high-efficiency power systems.
2. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**: In battery management systems and motor drive modules for electric and hybrid vehicles, the BUK7E2R3-40C-VB is able to handle high currents, provide efficient power switching functions and reliability.
3. **Industrial motor drives**: In industrial automation equipment, this MOSFET can be used to drive high-power motors and other loads, providing stable high current support to ensure the normal operation of the equipment.
4. **High-efficiency battery management system**: In the battery management system, BUK7E2R3-40C-VB is used to control the current flow during battery charging and discharging, optimize battery performance and extend its service life.
5. **High-power switching applications**: In various high-power switching applications, the high current carrying capacity and low on-resistance of this MOSFET make it an ideal choice to meet the needs of high efficiency and low energy consumption.
BUK7E2R3-40C-VB MOSFET is an ideal choice for high-efficiency, high-power applications due to its excellent electrical performance and high reliability.
BUK7E2R3-40C-VB MOSFET performs well in multiple high-power and high-efficiency applications. Here are some key application examples:
1. **Power converters and switching power supplies**: In power converters and switching power supplies, the low on-resistance and high current capability of the BUK7E2R3-40C-VB MOSFET ensure efficient power conversion and minimal power loss, making it suitable for high-efficiency power systems.
2. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**: In battery management systems and motor drive modules for electric and hybrid vehicles, the BUK7E2R3-40C-VB is able to handle high currents, provide efficient power switching functions and reliability.
3. **Industrial motor drives**: In industrial automation equipment, this MOSFET can be used to drive high-power motors and other loads, providing stable high current support to ensure the normal operation of the equipment.
4. **High-efficiency battery management system**: In the battery management system, BUK7E2R3-40C-VB is used to control the current flow during battery charging and discharging, optimize battery performance and extend its service life.
5. **High-power switching applications**: In various high-power switching applications, the high current carrying capacity and low on-resistance of this MOSFET make it an ideal choice to meet the needs of high efficiency and low energy consumption.
BUK7E2R3-40C-VB MOSFET is an ideal choice for high-efficiency, high-power applications due to its excellent electrical performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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