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BUK7E11-55B-VB Product details
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BUK7E11-55B-VB MOSFET Product Introduction
BUK7E11-55B-VB is a single N-channel MOSFET with a TO262 package. This MOSFET uses Trench technology and has a maximum drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.5V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 6mΩ. BUK7E11-55B-VB can carry a continuous drain current (ID) of up to 120A.
BUK7E11-55B-VB is a single N-channel MOSFET with a TO262 package. This MOSFET uses Trench technology and has a maximum drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 2.5V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 6mΩ. BUK7E11-55B-VB can carry a continuous drain current (ID) of up to 120A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 120A
- **Technology**: Trench
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Application Examples
1. **Power Switch**:
- The low on-resistance and high current handling capability of the BUK7E11-55B-VB make it very effective in power switching applications. It enables efficient switching operations in high-current power modules, reduces power losses, and improves the overall efficiency of the power system.
2. **Electric Vehicle (EV) Charging System**:
- In the charging system of electric vehicles, this MOSFET can efficiently handle large currents to ensure stability and safety during the charging process. Its low on-resistance helps reduce the heat generated during the charging process and improves the efficiency of the charging system.
3. **Industrial Motor Control**:
- For high-current motor control applications, the BUK7E11-55B-VB is an ideal choice. Its high current carrying capability and low on-resistance can improve the performance and efficiency of motor control systems, and is suitable for high-power motor control in industrial automation and drive systems.
4. **Switching Power Module**:
- In the switching power module, the high current capability and low on-resistance of BUK7E11-55B-VB enable it to handle high-power switching requirements, improve the performance and reliability of the power module, and be suitable for various high-efficiency power supply designs.
5. **Inverter Application**:
- This MOSFET performs well in inverter applications, especially solar inverters. It can efficiently handle high current loads, improve DC to AC conversion efficiency, reduce power loss, and improve the overall performance and stability of the system.
1. **Power Switch**:
- The low on-resistance and high current handling capability of the BUK7E11-55B-VB make it very effective in power switching applications. It enables efficient switching operations in high-current power modules, reduces power losses, and improves the overall efficiency of the power system.
2. **Electric Vehicle (EV) Charging System**:
- In the charging system of electric vehicles, this MOSFET can efficiently handle large currents to ensure stability and safety during the charging process. Its low on-resistance helps reduce the heat generated during the charging process and improves the efficiency of the charging system.
3. **Industrial Motor Control**:
- For high-current motor control applications, the BUK7E11-55B-VB is an ideal choice. Its high current carrying capability and low on-resistance can improve the performance and efficiency of motor control systems, and is suitable for high-power motor control in industrial automation and drive systems.
4. **Switching Power Module**:
- In the switching power module, the high current capability and low on-resistance of BUK7E11-55B-VB enable it to handle high-power switching requirements, improve the performance and reliability of the power module, and be suitable for various high-efficiency power supply designs.
5. **Inverter Application**:
- This MOSFET performs well in inverter applications, especially solar inverters. It can efficiently handle high current loads, improve DC to AC conversion efficiency, reduce power loss, and improve the overall performance and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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