中文
English
BUK7E07-55B-VB Product details
Back to previous pageProduct introduction：
BUK7E07-55B-VB MOSFET Product Introduction
BUK7E07-55B-VB is a high-performance N-channel MOSFET in a TO-262 package. This MOSFET is designed for applications requiring high current and low to medium voltage, with a drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is 3.5V, and its on-state resistance (R_DS(ON)) is 2.8 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to 210A. BUK7E07-55B-VB uses advanced trench technology, has extremely low on-state resistance and excellent switching performance, and is suitable for a variety of high current and high efficiency application scenarios.
BUK7E07-55B-VB is a high-performance N-channel MOSFET in a TO-262 package. This MOSFET is designed for applications requiring high current and low to medium voltage, with a drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is 3.5V, and its on-state resistance (R_DS(ON)) is 2.8 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to 210A. BUK7E07-55B-VB uses advanced trench technology, has extremely low on-state resistance and excellent switching performance, and is suitable for a variety of high current and high efficiency application scenarios.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
1. **Package**: TO-262
- This package provides good heat dissipation and stable mechanical strength, suitable for high power density circuit design.
2. **Configuration**: Single N-channel
- This configuration is suitable for efficient switch control, especially in applications that require high current handling.
3. **V_DS (drain-source voltage)**: 60V
- Suitable for medium and low voltage applications, capable of handling high current loads while maintaining high voltage safety.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to different control voltage requirements.
5. **V_th (threshold voltage)**: 3.5V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation at lower voltages.
6. **R_DS(ON)**: 2.8 mΩ @ V_GS = 10V
- Low on-resistance reduces power consumption and improves overall circuit efficiency, suitable for high current applications.
7. **I_D (continuous leakage current)**: 210A
- Handles high current loads and is suitable for various application scenarios requiring high current.
8. **Technology**: Trench
- Provides excellent switching performance and extremely low on-resistance, suitable for various circuit designs requiring high current and high efficiency.
1. **Package**: TO-262
- This package provides good heat dissipation and stable mechanical strength, suitable for high power density circuit design.
2. **Configuration**: Single N-channel
- This configuration is suitable for efficient switch control, especially in applications that require high current handling.
3. **V_DS (drain-source voltage)**: 60V
- Suitable for medium and low voltage applications, capable of handling high current loads while maintaining high voltage safety.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to different control voltage requirements.
5. **V_th (threshold voltage)**: 3.5V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation at lower voltages.
6. **R_DS(ON)**: 2.8 mΩ @ V_GS = 10V
- Low on-resistance reduces power consumption and improves overall circuit efficiency, suitable for high current applications.
7. **I_D (continuous leakage current)**: 210A
- Handles high current loads and is suitable for various application scenarios requiring high current.
8. **Technology**: Trench
- Provides excellent switching performance and extremely low on-resistance, suitable for various circuit designs requiring high current and high efficiency.
Domain and module applications：
Application Examples
**1. Power Management: **
- **Field**: High-efficiency Switching Power Supply (SMPS)
- **Example**: In high-efficiency switching power supply modules, BUK7E07-55B-VB can handle high current output, provide excellent switching performance and low power consumption, ensure the stability and high efficiency of the power system, and is particularly suitable for power supply designs that require high current and low power consumption.
**2. Electric Vehicles: **
- **Field**: Electric Vehicle Drive System
- **Example**: In the motor drive system of electric vehicles, BUK7E07-55B-VB provides high current switching control, can handle the high current load of electric vehicle motors, ensure the smooth operation of electric vehicles under high loads, and is suitable for the power system and battery management of electric vehicles.
**3. Data Center Power Supply: **
- **Field**: Data Center and Server Power Supply
- **Example**: In the power management system of the data center, BUK7E07-55B-VB can effectively handle high current loads and ensure the efficient and stable operation of the server power supply. Its low on-resistance and high current carrying capacity make it an ideal choice for data center power management.
**4. Industrial Automation: **
- **Field**: Industrial Motor Drive
- **Example**: In the motor drive circuit of the industrial automation system, BUK7E07-55B-VB provides efficient switch control, can handle high current loads, and ensure the stable operation of the motor. It is suitable for industrial motor control applications that require high current and high efficiency.
**5. Solar inverter: **
- **Field**: Renewable energy
- **Example**: In solar inverters, BUK7E07-55B-VB can efficiently handle the current output of solar panels, ensuring efficient and stable energy conversion. Its excellent switching performance and high current carrying capacity make it suitable for the design of solar inverters.
In short, BUK7E07-55B-VB MOSFET is a high-current, medium-to-low voltage switching device that is widely used in electronic applications with high current and high efficiency requirements. Its excellent switching performance and low on-resistance make it play an important role in many fields.
**1. Power Management: **
- **Field**: High-efficiency Switching Power Supply (SMPS)
- **Example**: In high-efficiency switching power supply modules, BUK7E07-55B-VB can handle high current output, provide excellent switching performance and low power consumption, ensure the stability and high efficiency of the power system, and is particularly suitable for power supply designs that require high current and low power consumption.
**2. Electric Vehicles: **
- **Field**: Electric Vehicle Drive System
- **Example**: In the motor drive system of electric vehicles, BUK7E07-55B-VB provides high current switching control, can handle the high current load of electric vehicle motors, ensure the smooth operation of electric vehicles under high loads, and is suitable for the power system and battery management of electric vehicles.
**3. Data Center Power Supply: **
- **Field**: Data Center and Server Power Supply
- **Example**: In the power management system of the data center, BUK7E07-55B-VB can effectively handle high current loads and ensure the efficient and stable operation of the server power supply. Its low on-resistance and high current carrying capacity make it an ideal choice for data center power management.
**4. Industrial Automation: **
- **Field**: Industrial Motor Drive
- **Example**: In the motor drive circuit of the industrial automation system, BUK7E07-55B-VB provides efficient switch control, can handle high current loads, and ensure the stable operation of the motor. It is suitable for industrial motor control applications that require high current and high efficiency.
**5. Solar inverter: **
- **Field**: Renewable energy
- **Example**: In solar inverters, BUK7E07-55B-VB can efficiently handle the current output of solar panels, ensuring efficient and stable energy conversion. Its excellent switching performance and high current carrying capacity make it suitable for the design of solar inverters.
In short, BUK7E07-55B-VB MOSFET is a high-current, medium-to-low voltage switching device that is widely used in electronic applications with high current and high efficiency requirements. Its excellent switching performance and low on-resistance make it play an important role in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
