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BUK7830-30-VB Product details
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Product Overview: BUK7830-30-VB
BUK7830-30-VB is a high-performance unipolar N-channel MOSFET in SOT223 package, suitable for low-voltage high-efficiency switching applications. The MOSFET has a drain-source voltage (V_DS) of 30V and a gate-source voltage (V_GS) of 20V (±V), a threshold voltage (V_th) of 1.7V, an on-resistance (R_DS(on)) of 21mΩ @ V_GS = 4.5V and 19mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of 7A. Using Trench technology, it provides excellent switching performance and low conduction losses, suitable for a variety of high-efficiency power and control applications.
BUK7830-30-VB is a high-performance unipolar N-channel MOSFET in SOT223 package, suitable for low-voltage high-efficiency switching applications. The MOSFET has a drain-source voltage (V_DS) of 30V and a gate-source voltage (V_GS) of 20V (±V), a threshold voltage (V_th) of 1.7V, an on-resistance (R_DS(on)) of 21mΩ @ V_GS = 4.5V and 19mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of 7A. Using Trench technology, it provides excellent switching performance and low conduction losses, suitable for a variety of high-efficiency power and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
Detailed parameter description
- **Drain-Source Voltage (V_DS):** 30V
- The maximum voltage that can be applied between the drain and the source.
- **Gate-Source Voltage (V_GS):** 20V (±V)
- The maximum voltage that can be applied between the gate and the source.
- **Threshold Voltage (V_th):** 1.7V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 21mΩ @ V_GS = 4.5V
- The resistance between the drain and the source when the MOSFET is in the "on" state, measured when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 19mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the “on” state, measured when the gate-source voltage is 10V.
- **Continuous drain current (I_D):** 7A
- The maximum continuous current that can flow through the drain terminal when the device is properly heatsinked.
- **Package type:** SOT223
- The physical package of the MOSFET, which provides good thermal performance and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that the MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.
- **Drain-Source Voltage (V_DS):** 30V
- The maximum voltage that can be applied between the drain and the source.
- **Gate-Source Voltage (V_GS):** 20V (±V)
- The maximum voltage that can be applied between the gate and the source.
- **Threshold Voltage (V_th):** 1.7V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 21mΩ @ V_GS = 4.5V
- The resistance between the drain and the source when the MOSFET is in the "on" state, measured when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 19mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the “on” state, measured when the gate-source voltage is 10V.
- **Continuous drain current (I_D):** 7A
- The maximum continuous current that can flow through the drain terminal when the device is properly heatsinked.
- **Package type:** SOT223
- The physical package of the MOSFET, which provides good thermal performance and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that the MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.
Domain and module applications：
Application Examples
**1. Switching Mode Power Supply (SMPS): **
- BUK7830-30-VB MOSFET is suitable for the power switch part in the switching mode power supply (SMPS). Its low on-resistance and high switching speed enable it to efficiently convert power, reduce energy loss, and improve the overall efficiency of the power supply.
**2. DC-DC Converter: **
- This MOSFET performs well in DC-DC converters, especially for applications that require high performance and compact size. Its low R_DS(on) ensures high efficiency of the converter, suitable for portable devices, communication equipment and embedded systems.
**3. Battery Management System (BMS): **
- BUK7830-30-VB can be used in the charge and discharge control part of the battery management system. Its low on-resistance and high current handling capability ensure safe and efficient battery management, suitable for battery packs in power tools, portable devices and electric vehicles.
**4. Load Switch:**
- In applications that require reliable load control, such as consumer electronics, home appliances, and industrial control systems, the BUK7830-30-VB can provide stable performance and low power consumption as a load switch.
**5. Automotive Electronics:**
- This MOSFET is suitable for various applications in automotive electronic systems, including lighting systems, electric seat adjustments, and sensor interfaces. Its high current capability and low on-resistance ensure the reliability and efficient operation of automotive electronic systems.
By applying the BUK7830-30-VB MOSFET to these fields, designers can achieve efficient and reliable performance that meets the requirements of low voltage, high current, and low on-resistance, making it an ideal choice for modern electronic systems.
**1. Switching Mode Power Supply (SMPS): **
- BUK7830-30-VB MOSFET is suitable for the power switch part in the switching mode power supply (SMPS). Its low on-resistance and high switching speed enable it to efficiently convert power, reduce energy loss, and improve the overall efficiency of the power supply.
**2. DC-DC Converter: **
- This MOSFET performs well in DC-DC converters, especially for applications that require high performance and compact size. Its low R_DS(on) ensures high efficiency of the converter, suitable for portable devices, communication equipment and embedded systems.
**3. Battery Management System (BMS): **
- BUK7830-30-VB can be used in the charge and discharge control part of the battery management system. Its low on-resistance and high current handling capability ensure safe and efficient battery management, suitable for battery packs in power tools, portable devices and electric vehicles.
**4. Load Switch:**
- In applications that require reliable load control, such as consumer electronics, home appliances, and industrial control systems, the BUK7830-30-VB can provide stable performance and low power consumption as a load switch.
**5. Automotive Electronics:**
- This MOSFET is suitable for various applications in automotive electronic systems, including lighting systems, electric seat adjustments, and sensor interfaces. Its high current capability and low on-resistance ensure the reliability and efficient operation of automotive electronic systems.
By applying the BUK7830-30-VB MOSFET to these fields, designers can achieve efficient and reliable performance that meets the requirements of low voltage, high current, and low on-resistance, making it an ideal choice for modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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