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BUK769R6-80E-VB Product details

Product introduction:

Product Introduction



BUK769R6-80E-VB is a high-performance N-channel MOSFET that uses advanced Trench technology and is packaged in TO263. This MOSFET is designed for high-efficiency, high-power applications. It has high current carrying capacity and low on-resistance and is suitable for a variety of high-power power management and conversion applications. Its maximum drain-source voltage (VDS) is 80V and its maximum drain current (ID) is 120A, ensuring stable operation under harsh working conditions.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 120A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description



- **Package type**: TO263

- **Configuration**: Single N-channel

- **Drain-source voltage (VDS)**: 80V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**: 3V

- **On-resistance (RDS(ON))**:

- 10mΩ @ VGS=4.5V

- 6mΩ @ VGS=10V

- **Drain current (ID)**: 120A

- **Technology**: Trench

- **Other key parameters**:

- **Power dissipation (Ptot)**: Typical value is 150W

- **Junction-to-ambient thermal resistance (RθJA)**: Maximum value is 62.5°C/W

- **Junction to case thermal resistance (RθJC)**: 0.8°C/W maximum

- **Operating temperature range (Tj)**: -55°C to +175°C



Domain and module applications:

Application fields and module examples



BUK769R6-80E-VB MOSFET is widely used in many fields and modules. Here are some main application examples:



1. **High-efficiency power management system**: In the power management system of servers, computers and telecommunications equipment, BUK769R6-80E-VB MOSFET provides stable power switching function to ensure efficient power conversion and transmission.



2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: This MOSFET is widely used in battery management systems and motor drive modules of electric vehicles and hybrid vehicles, capable of handling high currents and improving the energy efficiency and reliability of the system.



3. **Solar Inverter**: In the inverter module of the solar power generation system, BUK769R6-80E-VB is used for DC to AC power conversion, improving the overall energy conversion efficiency of the system.



4. **Industrial Automation**: In industrial automation equipment, this MOSFET is used to drive motors and control high-power devices to ensure stable operation and high efficiency of the system.



5. **Switching Power Supply (SMPS)**: In switching power supplies, BUK769R6-80E-VB achieves high-efficiency power conversion and low-loss switching operation, suitable for a variety of high-power application scenarios.



BUK769R6-80E-VB MOSFET has become an ideal choice for a variety of high-power and high-efficiency applications due to its excellent electrical performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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