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BUK768R3-60E-VB Product details
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BUK768R3-60E-VB MOSFET Product Introduction
BUK768R3-60E-VB is a single N-channel MOSFET with a TO263 package. This MOSFET uses Trench technology and has a maximum drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 4mΩ. BUK768R3-60E-VB can carry a continuous drain current (ID) of up to 150A.
BUK768R3-60E-VB is a single N-channel MOSFET with a TO263 package. This MOSFET uses Trench technology and has a maximum drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 4mΩ. BUK768R3-60E-VB can carry a continuous drain current (ID) of up to 150A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application Examples
1. **Electric Vehicle (EV) Drive System**:
- BUK768R3-60E-VB performs well in EV drive systems, especially for battery management and drive motor control. Its high current carrying capacity and low on-resistance can effectively improve system efficiency and stability, ensuring reliable operation of EVs under various operating conditions.
2. **High-efficiency Switching Power Supply**:
- This MOSFET is also very suitable for high-efficiency switching power supply applications. Its low on-resistance and high current handling capability enable it to achieve efficient power conversion in switching power supply modules, reduce power losses, and improve the overall efficiency of the power supply system.
3. **Industrial Automation Equipment**:
- BUK768R3-60E-VB is suitable for motor drive and control applications in industrial automation equipment. Its high current handling capability and low on-resistance help improve the performance and efficiency of motor drive systems, ensuring stable and efficient operation of industrial equipment.
4. **Solar Inverter**:
- In solar inverters, this MOSFET can effectively handle high currents and improve DC to AC conversion efficiency. Its low on-resistance characteristics help reduce energy losses and improve the overall efficiency and stability of solar systems.
5. **Power Distribution System**:
- In power distribution systems, BUK768R3-60E-VB can be used as a high-power load switch. Its high current carrying capacity and low on-resistance ensure reliable switching and stable operation of loads, suitable for a variety of high-power distribution applications.
1. **Electric Vehicle (EV) Drive System**:
- BUK768R3-60E-VB performs well in EV drive systems, especially for battery management and drive motor control. Its high current carrying capacity and low on-resistance can effectively improve system efficiency and stability, ensuring reliable operation of EVs under various operating conditions.
2. **High-efficiency Switching Power Supply**:
- This MOSFET is also very suitable for high-efficiency switching power supply applications. Its low on-resistance and high current handling capability enable it to achieve efficient power conversion in switching power supply modules, reduce power losses, and improve the overall efficiency of the power supply system.
3. **Industrial Automation Equipment**:
- BUK768R3-60E-VB is suitable for motor drive and control applications in industrial automation equipment. Its high current handling capability and low on-resistance help improve the performance and efficiency of motor drive systems, ensuring stable and efficient operation of industrial equipment.
4. **Solar Inverter**:
- In solar inverters, this MOSFET can effectively handle high currents and improve DC to AC conversion efficiency. Its low on-resistance characteristics help reduce energy losses and improve the overall efficiency and stability of solar systems.
5. **Power Distribution System**:
- In power distribution systems, BUK768R3-60E-VB can be used as a high-power load switch. Its high current carrying capacity and low on-resistance ensure reliable switching and stable operation of loads, suitable for a variety of high-power distribution applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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