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BUK768R1-40E-VB Product details
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BUK768R1-40E-VB MOSFET Product Introduction
BUK768R1-40E-VB is a high-performance N-channel MOSFET in a TO-263 package, designed for medium and low voltage and high current applications. The MOSFET has a drain-source voltage (V_DS) of 40V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is 2.5V, and its on-state resistance (R_DS(ON)) is 6 mΩ (at V_GS of 4.5V) and 5 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to 100A. BUK768R1-40E-VB uses trench technology, has excellent switching performance and low on-state resistance, and is suitable for a variety of electronic application scenarios requiring medium and low voltage and high current.
BUK768R1-40E-VB is a high-performance N-channel MOSFET in a TO-263 package, designed for medium and low voltage and high current applications. The MOSFET has a drain-source voltage (V_DS) of 40V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is 2.5V, and its on-state resistance (R_DS(ON)) is 6 mΩ (at V_GS of 4.5V) and 5 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to 100A. BUK768R1-40E-VB uses trench technology, has excellent switching performance and low on-state resistance, and is suitable for a variety of electronic application scenarios requiring medium and low voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO-263
- Provides good heat dissipation performance, suitable for high power and compact circuit design.
2. **Configuration**: Single N-channel
- Suitable for efficient switching control, especially in medium and low voltage and high current applications.
3. **V_DS (drain-source voltage)**: 40V
- Suitable for medium and low voltage applications, capable of handling higher voltage requirements.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to different control voltage requirements.
5. **V_th (threshold voltage)**: 2.5V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation at lower voltages.
6. **R_DS(ON)**: 6 mΩ @ V_GS = 4.5V, 5 mΩ @ V_GS = 10V
- Lower on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 100A
- Capable of handling high current loads, suitable for a variety of applications requiring high current.
8. **Technology**: Trench
- Provides excellent switching performance and low on-resistance, suitable for a variety of medium and low voltage current applications.
1. **Package**: TO-263
- Provides good heat dissipation performance, suitable for high power and compact circuit design.
2. **Configuration**: Single N-channel
- Suitable for efficient switching control, especially in medium and low voltage and high current applications.
3. **V_DS (drain-source voltage)**: 40V
- Suitable for medium and low voltage applications, capable of handling higher voltage requirements.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to different control voltage requirements.
5. **V_th (threshold voltage)**: 2.5V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation at lower voltages.
6. **R_DS(ON)**: 6 mΩ @ V_GS = 4.5V, 5 mΩ @ V_GS = 10V
- Lower on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 100A
- Capable of handling high current loads, suitable for a variety of applications requiring high current.
8. **Technology**: Trench
- Provides excellent switching performance and low on-resistance, suitable for a variety of medium and low voltage current applications.
Domain and module applications：
Application Examples
**1. Power Management: **
- **Field**: High-efficiency Switching Power Supply (SMPS)
- **Example**: In high-efficiency switching power supply systems, BUK768R1-40E-VB is able to handle power modules with high current output. Its low on-state resistance and high current carrying capacity enable it to perform well in power management, improve the stability and efficiency of the power supply, and is particularly suitable for power supply applications with high power density.
**2. Power Tools: **
- **Field**: Portable Power Tools
- **Example**: In the driving circuit of power tools, BUK768R1-40E-VB provides efficient switching control, can withstand high current loads, ensures smooth operation of the tool under high loads, and extends battery life, making it suitable for a variety of power tool applications that require high power output.
**3. Motor drive: **
- **Field**: Industrial automation
- **Example**: In motor drive circuits, BUK768R1-40E-VB can provide efficient switch control, especially in high current motor load applications. Its low on-resistance ensures smooth operation of the motor, suitable for motor control needs in industrial automation.
**4. Solar inverter: **
- **Field**: Renewable energy
- **Example**: In solar inverters, BUK768R1-40E-VB can handle the high current conversion process, ensuring efficient energy conversion and transmission. Its low on-resistance and high current carrying capacity make it have excellent performance in solar inverters, suitable for solar applications that require high efficiency and high power output.
**5. Automotive electronics: **
- **Field**: Automotive power system
- **Example**: In automotive electronic systems, BUK768R1-40E-VB can be used for battery management and motor control. Its high current handling capability and low on-resistance ensure efficient and stable operation of automotive systems, and is particularly suitable for medium-to-high current and high-power automotive applications.
In summary, BUK768R1-40E-VB MOSFET is a medium-to-low voltage, high current handling switching device that is widely used in a variety of electronic applications with medium-to-low power and high efficiency requirements. Its excellent switching performance and low on-resistance enable it to play an important role in multiple fields.
**1. Power Management: **
- **Field**: High-efficiency Switching Power Supply (SMPS)
- **Example**: In high-efficiency switching power supply systems, BUK768R1-40E-VB is able to handle power modules with high current output. Its low on-state resistance and high current carrying capacity enable it to perform well in power management, improve the stability and efficiency of the power supply, and is particularly suitable for power supply applications with high power density.
**2. Power Tools: **
- **Field**: Portable Power Tools
- **Example**: In the driving circuit of power tools, BUK768R1-40E-VB provides efficient switching control, can withstand high current loads, ensures smooth operation of the tool under high loads, and extends battery life, making it suitable for a variety of power tool applications that require high power output.
**3. Motor drive: **
- **Field**: Industrial automation
- **Example**: In motor drive circuits, BUK768R1-40E-VB can provide efficient switch control, especially in high current motor load applications. Its low on-resistance ensures smooth operation of the motor, suitable for motor control needs in industrial automation.
**4. Solar inverter: **
- **Field**: Renewable energy
- **Example**: In solar inverters, BUK768R1-40E-VB can handle the high current conversion process, ensuring efficient energy conversion and transmission. Its low on-resistance and high current carrying capacity make it have excellent performance in solar inverters, suitable for solar applications that require high efficiency and high power output.
**5. Automotive electronics: **
- **Field**: Automotive power system
- **Example**: In automotive electronic systems, BUK768R1-40E-VB can be used for battery management and motor control. Its high current handling capability and low on-resistance ensure efficient and stable operation of automotive systems, and is particularly suitable for medium-to-high current and high-power automotive applications.
In summary, BUK768R1-40E-VB MOSFET is a medium-to-low voltage, high current handling switching device that is widely used in a variety of electronic applications with medium-to-low power and high efficiency requirements. Its excellent switching performance and low on-resistance enable it to play an important role in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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