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BUK768R1-100E-VB Product details
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# Product Introduction:
BUK768R1-100E-VB is a high-performance single N-channel MOSFET in TO-263 package. This MOSFET is designed for high voltage and high current applications and can withstand a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and when VGS = 10V, the on-resistance (RDS(ON)) is 4mΩ, and the supported continuous drain current (ID) can reach up to 140A. The device uses Trench technology to provide an efficient and stable power switching solution.
BUK768R1-100E-VB is a high-performance single N-channel MOSFET in TO-263 package. This MOSFET is designed for high voltage and high current applications and can withstand a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and when VGS = 10V, the on-resistance (RDS(ON)) is 4mΩ, and the supported continuous drain current (ID) can reach up to 140A. The device uses Trench technology to provide an efficient and stable power switching solution.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 3V | 140A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
# Detailed parameters:
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 140A
- **Technology**: Trench
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 140A
- **Technology**: Trench
Domain and module applications：
Application Examples:
1. **High-power switching power supply**:
BUK768R1-100E-VB is suitable for high-power switching power supply. Its high voltage carrying capacity and low on-resistance enable it to improve power conversion efficiency and reduce energy loss. It performs well in high-power power management and conversion applications.
2. **Motor drive system**:
In motor drive applications, BUK768R1-100E-VB provides strong switching capability and high current handling capability, suitable for controlling high-current motors. Its low on-resistance helps improve system efficiency and ensure stable operation of the motor.
3. **Battery management system**:
This MOSFET can be used in battery management systems, especially in battery packs for electric vehicles. Its high voltage and high current handling capabilities can effectively manage the battery charging and discharging process, improving the stability and efficiency of the system.
4. **High-power LED driver**:
In driving high-power LED systems, the low on-resistance and high current handling capability of the BUK768R1-100E-VB help improve the overall efficiency of the system, ensure efficient LED lighting effects, and improve system stability.
5. **Power regulator**:
The BUK768R1-100E-VB is suitable for a variety of power regulator applications. Its high voltage and high current capabilities enable it to efficiently handle power regulation tasks, improving system performance and reliability.
6. **Industrial power management**:
In industrial power management, this MOSFET provides high voltage and high current handling capabilities, suitable for high-power power control and management, improving system stability and reliability.
By leveraging the excellent switching performance and high current carrying capability of the BUK768R1-100E-VB MOSFET, efficient and stable power control and management can be achieved in multiple high-voltage and high-current applications.
1. **High-power switching power supply**:
BUK768R1-100E-VB is suitable for high-power switching power supply. Its high voltage carrying capacity and low on-resistance enable it to improve power conversion efficiency and reduce energy loss. It performs well in high-power power management and conversion applications.
2. **Motor drive system**:
In motor drive applications, BUK768R1-100E-VB provides strong switching capability and high current handling capability, suitable for controlling high-current motors. Its low on-resistance helps improve system efficiency and ensure stable operation of the motor.
3. **Battery management system**:
This MOSFET can be used in battery management systems, especially in battery packs for electric vehicles. Its high voltage and high current handling capabilities can effectively manage the battery charging and discharging process, improving the stability and efficiency of the system.
4. **High-power LED driver**:
In driving high-power LED systems, the low on-resistance and high current handling capability of the BUK768R1-100E-VB help improve the overall efficiency of the system, ensure efficient LED lighting effects, and improve system stability.
5. **Power regulator**:
The BUK768R1-100E-VB is suitable for a variety of power regulator applications. Its high voltage and high current capabilities enable it to efficiently handle power regulation tasks, improving system performance and reliability.
6. **Industrial power management**:
In industrial power management, this MOSFET provides high voltage and high current handling capabilities, suitable for high-power power control and management, improving system stability and reliability.
By leveraging the excellent switching performance and high current carrying capability of the BUK768R1-100E-VB MOSFET, efficient and stable power control and management can be achieved in multiple high-voltage and high-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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