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BUK766R0-60E-VB Product details
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Product Introduction
BUK766R0-60E-VB is a high-performance single N-channel MOSFET in a TO263 package. The device has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. At a VGS of 10V, its on-resistance (RDS(ON)) is 4mΩ and supports a continuous drain current (ID) of up to 150A. BUK766R0-60E-VB uses advanced Trench technology, has extremely low conduction losses and excellent switching performance, and is suitable for a variety of high-current and high-efficiency application scenarios.
BUK766R0-60E-VB is a high-performance single N-channel MOSFET in a TO263 package. The device has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. At a VGS of 10V, its on-resistance (RDS(ON)) is 4mΩ and supports a continuous drain current (ID) of up to 150A. BUK766R0-60E-VB uses advanced Trench technology, has extremely low conduction losses and excellent switching performance, and is suitable for a variety of high-current and high-efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: BUK766R0-60E-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Model**: BUK766R0-60E-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**
BUK766R0-60E-VB is ideal for high-power power management modules, such as efficient DC-DC converters and power switches. In these applications, its low on-resistance and high current handling capability can effectively reduce power losses and improve system efficiency and stability.
2. **Electric vehicles**
In the power system of electric vehicles, BUK766R0-60E-VB is able to support high current loads and maintain low conduction losses under high load conditions. This makes it ideal for battery management systems (BMS), electric drive systems, and fast charging modules to ensure efficient operation and reliability of the system.
3. **Industrial motor control**
This MOSFET is suitable for industrial motor control applications, including motor drives and servo control systems. Its high current handling capability and low on-resistance can ensure that the motor operates efficiently under high load conditions, improving system stability and performance.
4. **High-power LED lighting**
In high-power LED lighting applications, BUK766R0-60E-VB can efficiently control large currents, thereby improving the brightness and overall energy efficiency of the LED. Its low on-resistance helps reduce energy loss, extend the life of the LED, and provide stable lighting effects.
These application examples show the wide applicability of BUK766R0-60E-VB in high-current and high-efficiency demanding situations, and its excellent electrical characteristics make it an ideal choice for a variety of critical applications.
1. **Power management**
BUK766R0-60E-VB is ideal for high-power power management modules, such as efficient DC-DC converters and power switches. In these applications, its low on-resistance and high current handling capability can effectively reduce power losses and improve system efficiency and stability.
2. **Electric vehicles**
In the power system of electric vehicles, BUK766R0-60E-VB is able to support high current loads and maintain low conduction losses under high load conditions. This makes it ideal for battery management systems (BMS), electric drive systems, and fast charging modules to ensure efficient operation and reliability of the system.
3. **Industrial motor control**
This MOSFET is suitable for industrial motor control applications, including motor drives and servo control systems. Its high current handling capability and low on-resistance can ensure that the motor operates efficiently under high load conditions, improving system stability and performance.
4. **High-power LED lighting**
In high-power LED lighting applications, BUK766R0-60E-VB can efficiently control large currents, thereby improving the brightness and overall energy efficiency of the LED. Its low on-resistance helps reduce energy loss, extend the life of the LED, and provide stable lighting effects.
These application examples show the wide applicability of BUK766R0-60E-VB in high-current and high-efficiency demanding situations, and its excellent electrical characteristics make it an ideal choice for a variety of critical applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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