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BUK765R3-40E-VB Product details

Product introduction:

BUK765R3-40E-VB MOSFET Product Introduction



BUK765R3-40E-VB is a high-performance single N-channel power MOSFET in TO263 package, designed for high current and high efficiency applications. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) range of ±20V, this MOSFET can operate stably under medium voltage conditions. Its threshold voltage (Vth) is 2.5V, ensuring reliable conduction even at lower gate voltages. The on-resistance (RDS(ON)) of BUK765R3-40E-VB is 6mΩ @ VGS=4.5V and 5mΩ @ VGS=10V, supporting a maximum continuous drain current (ID) of 100A. Using Trench technology, it provides extremely low on-resistance and excellent switching performance, suitable for high power and high efficiency applications.



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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 2.5V 100A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description



1. **Package:** TO263

2. **Configuration:** Single N-channel

3. **VDS (drain-source voltage):** 40V

4. **VGS (gate-source voltage):** ±20V

5. **Vth (threshold voltage):** 2.5V

6. **RDS(ON) (on-resistance):**

- 6mΩ @ VGS=4.5V

- 5mΩ @ VGS=10V

7. **ID (continuous leakage current):** 100A

8. **Technology:** Trench



Domain and module applications:

Applications and usage scenarios



BUK765R3-40E-VB MOSFET is suitable for the following fields and modules due to its low on-resistance and high current handling capability:



1. **Power management:** Suitable for switch mode power supply (SMPS) and high power power supply modules, providing efficient energy conversion and low power consumption to meet the needs of high power power supply.

2. **Electric vehicles:** In electric vehicle drive systems, BUK765R3-40E-VB can handle high currents and ensure efficient power transmission, thereby improving the performance and endurance of electric vehicles.

3. **Motor control:** Used in motor control applications in industrial automation and consumer electronics, supporting precise control and regulation of high-power motors, improving the overall efficiency and reliability of the system.

4. **Battery management system:** In high-current battery management systems, it can be used for charge and discharge control to ensure the safety of battery packs and extend their service life.

5. **DC-DC Converter:** Used in high-power DC-DC converters to provide stable voltage conversion, suitable for a variety of high-power electronic devices and applications.

6. **Load Switch:** Provides reliable switching performance in high-current load switch applications, suitable for industrial equipment, computer hardware and other high-power applications.



These application examples show the BUK765R3-40E-VB MOSFET's wide range of uses and reliability under high current and high efficiency requirements, suitable for a variety of high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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