Featured Model

BUK764R0-75C-VB Product details

Product introduction:

Product Introduction



BUK764R0-75C-VB is a high-performance N-channel MOSFET that uses advanced Trench technology and is packaged in TO263. This MOSFET has high current carrying capacity and extremely low on-resistance, making it ideal for high-efficiency power applications. Its maximum drain-source voltage (VDS) is 80V and its maximum drain current (ID) is 120A, enabling stable operation in a variety of high-power applications. The low on-resistance (RDS(ON)) is 10mΩ at VGS=4.5V and drops to 6mΩ at VGS=10V, ensuring high-efficiency power conversion and low-power operation.



File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 120A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description



- **Package type**: TO263

- **Configuration**: Single N-channel

- **Drain-source voltage (VDS)**: 80V

- **Gate-source voltage (VGS)**: ±20V

- **Threshold voltage (Vth)**: 3V

- **On-resistance (RDS(ON))**:

- 10mΩ @ VGS=4.5V

- 6mΩ @ VGS=10V

- **Drain current (ID)**: 120A

- **Technology**: Trench

- **Other key parameters**:

- **Power dissipation (Ptot)**: Typical value is 150W

- **Junction-to-ambient thermal resistance (RθJA)**: Maximum value is 62.5°C/W

- **Junction to case thermal resistance (RθJC)**: 0.8°C/W maximum

- **Operating temperature range (Tj)**: -55°C to +175°C



Domain and module applications:

Application fields and module examples



BUK764R0-75C-VB MOSFET has a wide range of applications in various fields and modules. Here are some major application examples:



1. **Power converters and switching power supplies**: In power converters and switching power supplies, the BUK764R0-75C-VB MOSFET can effectively control high current paths and provide efficient power conversion and low power operation. Its low on-resistance helps reduce power loss and improve overall efficiency.



2. **Electric vehicles (EV) and hybrid electric vehicles (HEV)**: In the battery management system and motor drive circuits of electric vehicles and hybrid electric vehicles, the high current carrying capacity and low on-resistance of the BUK764R0-75C-VB help improve the overall performance and energy efficiency of the system.



3. **Industrial motor drive**: In industrial automation equipment, this MOSFET is used to drive high-power motors and other loads, capable of withstanding high currents and ensuring stable system operation.



4. **Power amplifier**: In power amplifier modules, this MOSFET can achieve efficient signal amplification to meet the requirements of high-power transmission.



5. **Battery management system**: In battery management systems, BUK764R0-75C-VB can be used to control the current flow during battery charging and discharging to ensure battery safety and efficiency.



BUK764R0-75C-VB MOSFET is an ideal choice for a variety of high-efficiency, high-power applications due to its high current carrying capacity, low on-resistance and high voltage resistance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat