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BUK763R9-60E-VB Product details
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# Product Introduction:
BUK763R9-60E-VB is a high-performance single N-channel MOSFET in TO-263 package. This MOSFET is designed for high current and medium voltage applications and can withstand a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is 12mΩ at VGS = 4.5V, while at VGS = 10V, the on-resistance drops to 3.2mΩ, supporting a continuous drain current (ID) of up to 210A. This device uses Trench technology and is suitable for power switching applications that require high current and low on-resistance.
BUK763R9-60E-VB is a high-performance single N-channel MOSFET in TO-263 package. This MOSFET is designed for high current and medium voltage applications and can withstand a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is 12mΩ at VGS = 4.5V, while at VGS = 10V, the on-resistance drops to 3.2mΩ, supporting a continuous drain current (ID) of up to 210A. This device uses Trench technology and is suitable for power switching applications that require high current and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | 3.2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
# Detailed parameters:
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 210A
- **Technology**: Trench
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 3.2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
## Application Examples:
1. **High-power DC-DC converter**:
BUK763R9-60E-VB is suitable for high-power DC-DC converters. Its high current carrying capacity and low on-resistance can significantly improve conversion efficiency and reduce energy loss. Especially under high current load conditions, this MOSFET can provide stable switching performance.
2. **Motor drive system**:
In the motor drive system, BUK763R9-60E-VB provides strong switching capability and high current handling capability, making it suitable for the control and drive of high-power motors. Its low on-resistance helps to improve the overall efficiency of the system.
3. **Battery management system**:
In battery management systems, especially in battery packs of electric vehicles, this MOSFET can effectively manage the charging and discharging process of the battery. Its high current handling capability ensures stable operation of the battery pack under high load.
4. **High-power LED driver**:
In driving high-power LED systems, the low on-resistance and high current capability of BUK763R9-60E-VB help improve the efficiency and stability of the system, ensuring efficient lighting of the LED.
5. **Power switch applications**:
BUK763R9-60E-VB provides efficient switching performance in various power switch applications, suitable for high-power power management and control systems, and its high current carrying capacity makes it excel in high-power applications.
6. **Industrial power management**:
In industrial power management systems, this MOSFET is able to handle high current and high power requirements, provide reliable switching performance, and is used in various power management and regulation situations to improve the stability and reliability of the system.
By utilizing the excellent switching performance and high current carrying capacity of the BUK763R9-60E-VB MOSFET, efficient and stable power control and management can be achieved in multiple high current and high power applications.
1. **High-power DC-DC converter**:
BUK763R9-60E-VB is suitable for high-power DC-DC converters. Its high current carrying capacity and low on-resistance can significantly improve conversion efficiency and reduce energy loss. Especially under high current load conditions, this MOSFET can provide stable switching performance.
2. **Motor drive system**:
In the motor drive system, BUK763R9-60E-VB provides strong switching capability and high current handling capability, making it suitable for the control and drive of high-power motors. Its low on-resistance helps to improve the overall efficiency of the system.
3. **Battery management system**:
In battery management systems, especially in battery packs of electric vehicles, this MOSFET can effectively manage the charging and discharging process of the battery. Its high current handling capability ensures stable operation of the battery pack under high load.
4. **High-power LED driver**:
In driving high-power LED systems, the low on-resistance and high current capability of BUK763R9-60E-VB help improve the efficiency and stability of the system, ensuring efficient lighting of the LED.
5. **Power switch applications**:
BUK763R9-60E-VB provides efficient switching performance in various power switch applications, suitable for high-power power management and control systems, and its high current carrying capacity makes it excel in high-power applications.
6. **Industrial power management**:
In industrial power management systems, this MOSFET is able to handle high current and high power requirements, provide reliable switching performance, and is used in various power management and regulation situations to improve the stability and reliability of the system.
By utilizing the excellent switching performance and high current carrying capacity of the BUK763R9-60E-VB MOSFET, efficient and stable power control and management can be achieved in multiple high current and high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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