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BUK763R1-60E-VB Product details
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Product Introduction
BUK763R1-60E-VB is a high-performance single N-channel MOSFET in TO263 package. The device is designed for high current applications and can withstand a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is 7mΩ at VGS=4.5V and 2.5mΩ at VGS=10V, and it can provide a continuous drain current of up to 270A. BUK763R1-60E-VB uses Trench technology to optimize switching performance and reduce conduction losses, making it very suitable for high-efficiency and high-power density applications.
BUK763R1-60E-VB is a high-performance single N-channel MOSFET in TO263 package. The device is designed for high current applications and can withstand a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is 7mΩ at VGS=4.5V and 2.5mΩ at VGS=10V, and it can provide a continuous drain current of up to 270A. BUK763R1-60E-VB uses Trench technology to optimize switching performance and reduce conduction losses, making it very suitable for high-efficiency and high-power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-efficiency power management**: BUK763R1-60E-VB is ideal for efficient DC-DC converters and switch mode power supplies (SMPS) due to its extremely low on-resistance and ultra-high current capability. In these applications, this MOSFET can significantly reduce power losses and improve the overall efficiency of the power system.
2. **Motor drive system**: In motor drive and control applications, BUK763R1-60E-VB can provide stable current support and is suitable for stepper motor drivers, DC motor controllers, etc. Its high current handling capability and low on-resistance ensure efficient operation of the motor.
3. **Automotive electronics**: This MOSFET is also suitable for automotive electronics such as battery management systems, LED lighting controls, and electric window controls. Its high current and low on-resistance characteristics can meet the high performance and reliability requirements of automotive electronics.
4. **Power Amplifier**: BUK763R1-60E-VB is an ideal choice in high-power power amplifier modules. It is capable of handling high-power loads and optimizing power output, suitable for applications such as broadcasting, communications, and high-power audio amplifiers.
These application examples demonstrate the wide applicability of BUK763R1-60E-VB in power management, motor drive, automotive electronics, and power amplification, making it an important component in high-performance electronic devices.
1. **High-efficiency power management**: BUK763R1-60E-VB is ideal for efficient DC-DC converters and switch mode power supplies (SMPS) due to its extremely low on-resistance and ultra-high current capability. In these applications, this MOSFET can significantly reduce power losses and improve the overall efficiency of the power system.
2. **Motor drive system**: In motor drive and control applications, BUK763R1-60E-VB can provide stable current support and is suitable for stepper motor drivers, DC motor controllers, etc. Its high current handling capability and low on-resistance ensure efficient operation of the motor.
3. **Automotive electronics**: This MOSFET is also suitable for automotive electronics such as battery management systems, LED lighting controls, and electric window controls. Its high current and low on-resistance characteristics can meet the high performance and reliability requirements of automotive electronics.
4. **Power Amplifier**: BUK763R1-60E-VB is an ideal choice in high-power power amplifier modules. It is capable of handling high-power loads and optimizing power output, suitable for applications such as broadcasting, communications, and high-power audio amplifiers.
These application examples demonstrate the wide applicability of BUK763R1-60E-VB in power management, motor drive, automotive electronics, and power amplification, making it an important component in high-performance electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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