中文
English
IPB026N10NF2SATMA1 Product details
Back to previous pageProduct introduction：
IPB026N10NF2SATMA1-VB is a TO263 packaged Single-N-Channel channel MOSFETs.
The product features Trench Technology, with Vds at 100V; Vgs at ±20V; and Ida at 180A. IPB026N10NF2SATMA1-VB MOSFET can be widely used in various electronic devices and systems requiring Single-N-Channel channel TO263 packaged MOSFETs.
The product features Trench Technology, with Vds at 100V; Vgs at ±20V; and Ida at 180A. IPB026N10NF2SATMA1-VB MOSFET can be widely used in various electronic devices and systems requiring Single-N-Channel channel TO263 packaged MOSFETs.
File download
Download PDF document
Download now
Product parameter：
| Part Number | Package | Configuration | Vds V | Vgs V | Vth(v)typ | IdA |
Rds(on) 10V(mΩ) |
Rds(on) 4.5V(mΩ) |
Rds(on) 2.5V(mΩ) |
Technology |
|---|---|---|---|---|---|---|---|---|---|---|
IPB026N10NF2SATMA1-VB 
|
TO263 | Single-N-Channel | 100V | ±20V | 3V | 180A | 3(mΩ) | Trench |
Domain and module applications：
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
