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SIRA18BDP-T1-GE3 Product details
Back to previous pageProduct introduction：
SIRA18BDP-T1-GE3-VB is a DFN8(5X6) packaged Single-N-Channel channel MOSFETs.
The product features SGT Technology, with Vds at 30V; Vgs at ±20V; and Ida at 45A. SIRA18BDP-T1-GE3-VB MOSFET can be widely used in various electronic devices and systems requiring Single-N-Channel channel DFN8(5X6) packaged MOSFETs.
The product features SGT Technology, with Vds at 30V; Vgs at ±20V; and Ida at 45A. SIRA18BDP-T1-GE3-VB MOSFET can be widely used in various electronic devices and systems requiring Single-N-Channel channel DFN8(5X6) packaged MOSFETs.
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Product parameter：
| Part Number | Package | Configuration | Vds V | Vgs V | Vth(v)typ | IdA |
Rds(on) 10V(mΩ) |
Rds(on) 4.5V(mΩ) |
Rds(on) 2.5V(mΩ) |
Technology |
|---|---|---|---|---|---|---|---|---|---|---|
SIRA18BDP-T1-GE3-VB 
|
DFN8(5X6) | Single-N-Channel | 30V | ±20V | 1.7V | 45A | 4.4(mΩ) | 5.3(mΩ) | 7.4（mΩ） | SGT |
Domain and module applications：
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
