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BUK762R4-60E-VB Product details
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Product Introduction
BUK762R4-60E-VB is a high-performance single N-channel MOSFET in a TO263 package. The device has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is 7mΩ at a VGS of 4.5V and 2.5mΩ at a VGS of 10V, and supports a continuous drain current (ID) of up to 270A. BUK762R4-60E-VB uses advanced Trench technology, with extremely low conduction losses and excellent switching performance, and is suitable for various application scenarios requiring high current and high efficiency.
BUK762R4-60E-VB is a high-performance single N-channel MOSFET in a TO263 package. The device has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 3V. Its on-resistance (RDS(ON)) is 7mΩ at a VGS of 4.5V and 2.5mΩ at a VGS of 10V, and supports a continuous drain current (ID) of up to 270A. BUK762R4-60E-VB uses advanced Trench technology, with extremely low conduction losses and excellent switching performance, and is suitable for various application scenarios requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 7(mΩ) | 2.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: BUK762R4-60E-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
- **Model**: BUK762R4-60E-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 2.5mΩ @ VGS=10V
- **Drain current (ID)**: 270A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High-power power management**
BUK762R4-60E-VB is ideal for high-power power management modules. For example, in high-efficiency DC-DC converters and power switches, it is able to handle high current loads and provide low-power operation. Its low on-resistance ensures efficient power conversion and reduces energy loss.
2. **Electric vehicles**
In the power system and drive system of electric vehicles, BUK762R4-60E-VB is able to support currents up to 270A and maintain low conduction losses under high load conditions. It is ideal for battery management systems (BMS), electric motor drives, and fast charging modules, providing stable and efficient current control.
3. **Industrial motor control**
The high current handling capability and low on-resistance of this MOSFET make it suitable for industrial motor control applications such as motor drives and servo control systems. In these applications, it is able to handle high current loads and provide stable current output, improving the reliability and performance of the equipment.
4. **High-power LED lighting**
BUK762R4-60E-VB is also suitable for high-power LED drivers. In LED lighting applications, it can efficiently control large currents, thereby improving the brightness and overall energy efficiency of the LED. Its low on-resistance helps reduce power losses, extend the life of the LED, and provide stable lighting effects.
These application examples show the wide applicability of BUK762R4-60E-VB in high-current and high-efficiency demand situations, and its excellent electrical characteristics make it an ideal choice for a variety of critical applications.
1. **High-power power management**
BUK762R4-60E-VB is ideal for high-power power management modules. For example, in high-efficiency DC-DC converters and power switches, it is able to handle high current loads and provide low-power operation. Its low on-resistance ensures efficient power conversion and reduces energy loss.
2. **Electric vehicles**
In the power system and drive system of electric vehicles, BUK762R4-60E-VB is able to support currents up to 270A and maintain low conduction losses under high load conditions. It is ideal for battery management systems (BMS), electric motor drives, and fast charging modules, providing stable and efficient current control.
3. **Industrial motor control**
The high current handling capability and low on-resistance of this MOSFET make it suitable for industrial motor control applications such as motor drives and servo control systems. In these applications, it is able to handle high current loads and provide stable current output, improving the reliability and performance of the equipment.
4. **High-power LED lighting**
BUK762R4-60E-VB is also suitable for high-power LED drivers. In LED lighting applications, it can efficiently control large currents, thereby improving the brightness and overall energy efficiency of the LED. Its low on-resistance helps reduce power losses, extend the life of the LED, and provide stable lighting effects.
These application examples show the wide applicability of BUK762R4-60E-VB in high-current and high-efficiency demand situations, and its excellent electrical characteristics make it an ideal choice for a variety of critical applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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