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BUK761R7-40E-VB Product details
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BUK761R7-40E-VB MOSFET Product Introduction
BUK761R7-40E-VB is a high-performance N-channel MOSFET in a TO-263 package, designed for medium voltage and high current applications. The MOSFET has a drain-source voltage (V_DS) of 40V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is 3V, and its on-state resistance (R_DS(ON)) is 2.5 mΩ (at V_GS of 4.5V) and 2 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to 150A. BUK761R7-40E-VB uses trench technology to provide excellent switching performance and extremely low on-state resistance, making it suitable for a variety of high current and high efficiency application scenarios.
BUK761R7-40E-VB is a high-performance N-channel MOSFET in a TO-263 package, designed for medium voltage and high current applications. The MOSFET has a drain-source voltage (V_DS) of 40V and a gate-source voltage (V_GS) of ±20V. Its threshold voltage (V_th) is 3V, and its on-state resistance (R_DS(ON)) is 2.5 mΩ (at V_GS of 4.5V) and 2 mΩ (at V_GS of 10V), and it can withstand a continuous leakage current (I_D) of up to 150A. BUK761R7-40E-VB uses trench technology to provide excellent switching performance and extremely low on-state resistance, making it suitable for a variety of high current and high efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2.5(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO-263
- With excellent heat dissipation performance and compact package design, it is suitable for high-power and high-density circuit applications.
2. **Configuration**: Single N-channel
- Suitable for efficient switch control, especially in applications requiring high current and low resistance.
3. **V_DS (drain-source voltage)**: 40V
- Suitable for medium-voltage applications and can handle higher voltage requirements.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to different control voltage requirements.
5. **V_th (threshold voltage)**: 3V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation at low voltage.
6. **R_DS(ON)**: 2.5 mΩ @ V_GS = 4.5V, 2 mΩ @ V_GS = 10V
- Extremely low on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 150A
- High current handling capability, suitable for applications requiring high current.
8. **Technology**: Trench
- Provides excellent switching performance and low on-resistance, suitable for a variety of high current applications.
1. **Package**: TO-263
- With excellent heat dissipation performance and compact package design, it is suitable for high-power and high-density circuit applications.
2. **Configuration**: Single N-channel
- Suitable for efficient switch control, especially in applications requiring high current and low resistance.
3. **V_DS (drain-source voltage)**: 40V
- Suitable for medium-voltage applications and can handle higher voltage requirements.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to different control voltage requirements.
5. **V_th (threshold voltage)**: 3V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation at low voltage.
6. **R_DS(ON)**: 2.5 mΩ @ V_GS = 4.5V, 2 mΩ @ V_GS = 10V
- Extremely low on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 150A
- High current handling capability, suitable for applications requiring high current.
8. **Technology**: Trench
- Provides excellent switching performance and low on-resistance, suitable for a variety of high current applications.
Domain and module applications：
Application Examples
**1. Power Management: **
- **Field**: High-efficiency Switching Power Supply (SMPS)
- **Example**: In high-efficiency switching power supply systems, BUK761R7-40E-VB is able to handle power modules with high current output. Its low on-resistance and high current carrying capacity enable it to excel in power management, improve the stability and efficiency of the power supply, and is particularly suitable for power applications with high power density.
**2. Electric Vehicles: **
- **Field**: Battery Management System
- **Example**: In the battery management system of electric vehicles, BUK761R7-40E-VB can be used for high-side switch control to protect the battery from overcurrent and overvoltage. Its high current handling capability and low on-resistance ensure the safe and stable operation of the battery system, improving the overall reliability of battery management.
**3. Motor drive: **
- **Field**: Industrial automation
- **Example**: In motor drive circuits, BUK761R7-40E-VB can provide efficient switch control, especially in high-current motor load applications. Its high current carrying capacity ensures smooth operation of the motor and is suitable for high-power motor control in industrial automation.
**4. High-power LED drive: **
- **Field**: Lighting system
- **Example**: In high-power LED drive circuits, BUK761R7-40E-VB can efficiently drive LED modules. Due to its low on-resistance, it can reduce power consumption and ensure stable brightness of the LED, making it suitable for LED lighting systems that require high power output.
**5. Automotive electronics: **
- **Field**: Automotive power system
- **Example**: In automotive electronic systems, BUK761R7-40E-VB can be used for battery management and motor control. Its high current handling capability and low on-resistance ensure efficient and stable operation of automotive systems, and is particularly suitable for high current and high power automotive applications.
In summary, the BUK761R7-40E-VB MOSFET is a medium voltage, high current handling switching device that is widely used in a variety of electronic applications with high power and high efficiency requirements. Its excellent switching performance and low on-resistance enable it to play an important role in many fields.
**1. Power Management: **
- **Field**: High-efficiency Switching Power Supply (SMPS)
- **Example**: In high-efficiency switching power supply systems, BUK761R7-40E-VB is able to handle power modules with high current output. Its low on-resistance and high current carrying capacity enable it to excel in power management, improve the stability and efficiency of the power supply, and is particularly suitable for power applications with high power density.
**2. Electric Vehicles: **
- **Field**: Battery Management System
- **Example**: In the battery management system of electric vehicles, BUK761R7-40E-VB can be used for high-side switch control to protect the battery from overcurrent and overvoltage. Its high current handling capability and low on-resistance ensure the safe and stable operation of the battery system, improving the overall reliability of battery management.
**3. Motor drive: **
- **Field**: Industrial automation
- **Example**: In motor drive circuits, BUK761R7-40E-VB can provide efficient switch control, especially in high-current motor load applications. Its high current carrying capacity ensures smooth operation of the motor and is suitable for high-power motor control in industrial automation.
**4. High-power LED drive: **
- **Field**: Lighting system
- **Example**: In high-power LED drive circuits, BUK761R7-40E-VB can efficiently drive LED modules. Due to its low on-resistance, it can reduce power consumption and ensure stable brightness of the LED, making it suitable for LED lighting systems that require high power output.
**5. Automotive electronics: **
- **Field**: Automotive power system
- **Example**: In automotive electronic systems, BUK761R7-40E-VB can be used for battery management and motor control. Its high current handling capability and low on-resistance ensure efficient and stable operation of automotive systems, and is particularly suitable for high current and high power automotive applications.
In summary, the BUK761R7-40E-VB MOSFET is a medium voltage, high current handling switching device that is widely used in a variety of electronic applications with high power and high efficiency requirements. Its excellent switching performance and low on-resistance enable it to play an important role in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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