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BUK761R6-40E-VB Product details
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Product Introduction:
BUK761R6-40E-VB is a high-performance single N-channel MOSFET in TO-263 package. This MOSFET is designed for high current and medium voltage applications and can withstand a maximum drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is 2.5mΩ at VGS = 4.5V, and drops to 2mΩ at VGS = 10V, supporting a continuous drain current (ID) of up to 150A. The device uses Trench technology to provide an efficient power switching solution.
BUK761R6-40E-VB is a high-performance single N-channel MOSFET in TO-263 package. This MOSFET is designed for high current and medium voltage applications and can withstand a maximum drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and the on-resistance (RDS(ON)) is 2.5mΩ at VGS = 4.5V, and drops to 2mΩ at VGS = 10V, supporting a continuous drain current (ID) of up to 150A. The device uses Trench technology to provide an efficient power switching solution.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2.5(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameters:
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application Examples:
1. **DC-DC Converter**:
BUK761R6-40E-VB is suitable for DC-DC converter applications. Its low on-resistance and high current capability enable it to improve conversion efficiency and reduce energy loss. It is especially suitable for use in conversion applications with high current requirements.
2. **Motor Drive**:
In motor drive systems, especially high current motor control, BUK761R6-40E-VB provides stable switching performance. Its high current carrying capacity ensures reliable operation of the motor under high load.
3. **Power Management System**:
This MOSFET can be applied to power management systems such as power switches and load switches. Its excellent on-performance and high current capability help improve the overall efficiency and stability of the system.
4. **High-power LED drivers**:
In high-power LED drivers, the low on-resistance and high current handling capability of the BUK761R6-40E-VB can improve system efficiency and performance, ensuring stable LED lighting effects.
5. **Battery management systems**:
This MOSFET is particularly suitable for electric vehicle battery packs in battery management systems, where its high current handling capability and low on-resistance help to efficiently manage the battery charging and discharging process.
6. **Power switching applications**:
In various power switching applications, the BUK761R6-40E-VB provides efficient switching capabilities and high current handling performance, suitable for high-power power management and control systems.
By leveraging the excellent switching performance and high current carrying capability of the BUK761R6-40E-VB MOSFET, efficient and stable power control and management can be achieved in multiple high current and medium voltage applications.
1. **DC-DC Converter**:
BUK761R6-40E-VB is suitable for DC-DC converter applications. Its low on-resistance and high current capability enable it to improve conversion efficiency and reduce energy loss. It is especially suitable for use in conversion applications with high current requirements.
2. **Motor Drive**:
In motor drive systems, especially high current motor control, BUK761R6-40E-VB provides stable switching performance. Its high current carrying capacity ensures reliable operation of the motor under high load.
3. **Power Management System**:
This MOSFET can be applied to power management systems such as power switches and load switches. Its excellent on-performance and high current capability help improve the overall efficiency and stability of the system.
4. **High-power LED drivers**:
In high-power LED drivers, the low on-resistance and high current handling capability of the BUK761R6-40E-VB can improve system efficiency and performance, ensuring stable LED lighting effects.
5. **Battery management systems**:
This MOSFET is particularly suitable for electric vehicle battery packs in battery management systems, where its high current handling capability and low on-resistance help to efficiently manage the battery charging and discharging process.
6. **Power switching applications**:
In various power switching applications, the BUK761R6-40E-VB provides efficient switching capabilities and high current handling performance, suitable for high-power power management and control systems.
By leveraging the excellent switching performance and high current carrying capability of the BUK761R6-40E-VB MOSFET, efficient and stable power control and management can be achieved in multiple high current and medium voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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