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BUK761R4-30E-VB Product details
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Product Introduction
BUK761R4-30E-VB is a high-performance single N-channel MOSFET in a TO263 package. The device has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 1.6mΩ at a VGS of 4.5V and 1.4mΩ at a VGS of 10V, and supports a continuous drain current (ID) of up to 260A. BUK761R4-30E-VB uses advanced Trench technology, with extremely low conduction losses and excellent switching performance, making it ideal for high-current, high-efficiency applications.
BUK761R4-30E-VB is a high-performance single N-channel MOSFET in a TO263 package. The device has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. Its on-resistance (RDS(ON)) is 1.6mΩ at a VGS of 4.5V and 1.4mΩ at a VGS of 10V, and supports a continuous drain current (ID) of up to 260A. BUK761R4-30E-VB uses advanced Trench technology, with extremely low conduction losses and excellent switching performance, making it ideal for high-current, high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.6(mΩ) | 1.4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: BUK761R4-30E-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.6mΩ @ VGS=4.5V
- 1.4mΩ @ VGS=10V
- **Drain current (ID)**: 260A
- **Technology**: Trench
- **Model**: BUK761R4-30E-VB
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.6mΩ @ VGS=4.5V
- 1.4mΩ @ VGS=10V
- **Drain current (ID)**: 260A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**
The high current handling capability and ultra-low on-resistance of the BUK761R4-30E-VB make it ideal for use in power management modules. For example, in high-efficiency DC-DC converters and power switches, this MOSFET can provide extremely low power loss and high efficiency to meet the needs of various high-power applications.
2. **Electric vehicles**
In the power system of electric vehicles, the BUK761R4-30E-VB can handle high currents and maintain low conduction losses. This makes it an ideal choice for battery management systems (BMS), electric drive systems, and fast charging modules to ensure efficient operation and reliability of the system.
3. **Industrial motor control**
This MOSFET is also very suitable for industrial motor control applications, including motor drives and servo control systems. Its high current capability and low on-resistance ensure that the motor operates efficiently under high load conditions while improving the stability and reliability of the system.
4. **High Power LED Driver**
In high power LED lighting applications, BUK761R4-30E-VB can effectively control large currents, thereby improving the brightness and efficiency of LEDs. Its low on-resistance helps reduce energy loss and ensures the stability of LED lamps during long-term operation.
These application examples demonstrate the wide applicability of BUK761R4-30E-VB in situations where high current and high efficiency are required. Its excellent electrical characteristics enable it to provide excellent performance in a variety of key applications.
1. **Power management**
The high current handling capability and ultra-low on-resistance of the BUK761R4-30E-VB make it ideal for use in power management modules. For example, in high-efficiency DC-DC converters and power switches, this MOSFET can provide extremely low power loss and high efficiency to meet the needs of various high-power applications.
2. **Electric vehicles**
In the power system of electric vehicles, the BUK761R4-30E-VB can handle high currents and maintain low conduction losses. This makes it an ideal choice for battery management systems (BMS), electric drive systems, and fast charging modules to ensure efficient operation and reliability of the system.
3. **Industrial motor control**
This MOSFET is also very suitable for industrial motor control applications, including motor drives and servo control systems. Its high current capability and low on-resistance ensure that the motor operates efficiently under high load conditions while improving the stability and reliability of the system.
4. **High Power LED Driver**
In high power LED lighting applications, BUK761R4-30E-VB can effectively control large currents, thereby improving the brightness and efficiency of LEDs. Its low on-resistance helps reduce energy loss and ensures the stability of LED lamps during long-term operation.
These application examples demonstrate the wide applicability of BUK761R4-30E-VB in situations where high current and high efficiency are required. Its excellent electrical characteristics enable it to provide excellent performance in a variety of key applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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