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BUK76150-55A-VB Product details
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Product Introduction
BUK76150-55A-VB is a high-performance N-channel MOSFET designed for high current and high efficiency switching applications. It is packaged in TO263, single N-channel configuration, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is 1.7V, the on-resistance (RDS(ON)) is 35mΩ (VGS = 4.5V) and 32mΩ (VGS = 10V), and the maximum continuous leakage current (ID) is 50A. Using Trench technology, BUK76150-55A-VB provides excellent switching performance and excellent power management capabilities.
BUK76150-55A-VB is a high-performance N-channel MOSFET designed for high current and high efficiency switching applications. It is packaged in TO263, single N-channel configuration, with a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is 1.7V, the on-resistance (RDS(ON)) is 35mΩ (VGS = 4.5V) and 32mΩ (VGS = 10V), and the maximum continuous leakage current (ID) is 50A. Using Trench technology, BUK76150-55A-VB provides excellent switching performance and excellent power management capabilities.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | 35(mΩ) | 32(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameters
- **Package:** TO263
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):** 35mΩ @ VGS = 4.5V; 32mΩ @ VGS = 10V
- **Continuous leakage current (ID):** 50A
- **Technology:** Trench
- **Package:** TO263
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 60V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):** 35mΩ @ VGS = 4.5V; 32mΩ @ VGS = 10V
- **Continuous leakage current (ID):** 50A
- **Technology:** Trench
Domain and module applications：
Application Examples
1. **Power Switch:**
BUK76150-55A-VB is ideal for switch mode power supplies (SMPS) and DC-DC converters. Its high current handling capability and low on-resistance enable it to efficiently control power switches, improving overall power efficiency and stability.
2. **Electric Vehicles:**
In electric vehicle applications, BUK76150-55A-VB can be used in battery management systems (BMS) and motor drive circuits. Its high current handling capability and low on-resistance ensure efficient operation of the battery and motor, improving the energy efficiency and reliability of the system.
3. **Industrial Control:**
In industrial control systems, BUK76150-55A-VB can be used to drive loads and switch control circuits. Its superior switching performance and high current capability make it suitable for various automation applications such as motor control and load switching.
4. **LED driving: **
BUK76150-55A-VB is suitable for LED driving applications, especially in situations where high current driving is required. Its low on-resistance and high current capability enable it to drive LEDs efficiently, ensuring brightness consistency and energy efficiency.
Overall, the BUK76150-55A-VB MOSFET is a high-performance N-channel component suitable for a variety of high current and high voltage applications, providing efficient power management and stable switching performance.
1. **Power Switch:**
BUK76150-55A-VB is ideal for switch mode power supplies (SMPS) and DC-DC converters. Its high current handling capability and low on-resistance enable it to efficiently control power switches, improving overall power efficiency and stability.
2. **Electric Vehicles:**
In electric vehicle applications, BUK76150-55A-VB can be used in battery management systems (BMS) and motor drive circuits. Its high current handling capability and low on-resistance ensure efficient operation of the battery and motor, improving the energy efficiency and reliability of the system.
3. **Industrial Control:**
In industrial control systems, BUK76150-55A-VB can be used to drive loads and switch control circuits. Its superior switching performance and high current capability make it suitable for various automation applications such as motor control and load switching.
4. **LED driving: **
BUK76150-55A-VB is suitable for LED driving applications, especially in situations where high current driving is required. Its low on-resistance and high current capability enable it to drive LEDs efficiently, ensuring brightness consistency and energy efficiency.
Overall, the BUK76150-55A-VB MOSFET is a high-performance N-channel component suitable for a variety of high current and high voltage applications, providing efficient power management and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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