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BUK7611-55B-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
BUK7611-55B-VB is a single N-channel MOSFET in TO-263 package. This MOSFET is designed for low voltage and high current applications and can withstand a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and when VGS = 10V, the on-resistance (RDS(ON)) is 4mΩ, and the supported continuous drain current (ID) can reach up to 150A. This device uses Trench technology and is suitable for efficient power switching and management applications.
BUK7611-55B-VB is a single N-channel MOSFET in TO-263 package. This MOSFET is designed for low voltage and high current applications and can withstand a maximum drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, and when VGS = 10V, the on-resistance (RDS(ON)) is 4mΩ, and the supported continuous drain current (ID) can reach up to 150A. This device uses Trench technology and is suitable for efficient power switching and management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameters:
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO-263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application Examples:
1. **High-power switching power supply**:
BUK7611-55B-VB is suitable for high-power switching power supply. Its low on-resistance and high current capability enable it to have excellent performance in high-power switching applications. It can improve the conversion efficiency of the switching power supply and reduce energy loss.
2. **Motor drive**:
In motor drive systems, especially in applications where high current is required, BUK7611-55B-VB provides stable switching capabilities. Its high current carrying capacity ensures the stability and reliability of the motor under high load.
3. **Battery management system**:
This MOSFET can be used in battery management systems, especially in battery packs for electric vehicles. Its high current handling capability and low on-resistance enable it to effectively manage the charging and discharging process of the battery.
4. **High-power LED drivers**:
In high-power LED drivers, the low on-resistance and high current capability of the BUK7611-55B-VB help improve the overall efficiency and performance of the system, thereby reducing energy loss and improving lighting effects.
5. **Power regulators**:
In power regulator applications, this MOSFET is able to handle high current and high power requirements, providing stable switching performance for a variety of power management and regulation applications.
6. **Industrial power management**:
In industrial power management systems, the high current carrying capability and low on-resistance of the BUK7611-55B-VB make it suitable for efficient power control and management, improving system stability and reliability.
By utilizing the excellent switching performance and high current carrying capability of the BUK7611-55B-VB MOSFET, efficient and reliable power control and management can be achieved in multiple fields.
1. **High-power switching power supply**:
BUK7611-55B-VB is suitable for high-power switching power supply. Its low on-resistance and high current capability enable it to have excellent performance in high-power switching applications. It can improve the conversion efficiency of the switching power supply and reduce energy loss.
2. **Motor drive**:
In motor drive systems, especially in applications where high current is required, BUK7611-55B-VB provides stable switching capabilities. Its high current carrying capacity ensures the stability and reliability of the motor under high load.
3. **Battery management system**:
This MOSFET can be used in battery management systems, especially in battery packs for electric vehicles. Its high current handling capability and low on-resistance enable it to effectively manage the charging and discharging process of the battery.
4. **High-power LED drivers**:
In high-power LED drivers, the low on-resistance and high current capability of the BUK7611-55B-VB help improve the overall efficiency and performance of the system, thereby reducing energy loss and improving lighting effects.
5. **Power regulators**:
In power regulator applications, this MOSFET is able to handle high current and high power requirements, providing stable switching performance for a variety of power management and regulation applications.
6. **Industrial power management**:
In industrial power management systems, the high current carrying capability and low on-resistance of the BUK7611-55B-VB make it suitable for efficient power control and management, improving system stability and reliability.
By utilizing the excellent switching performance and high current carrying capability of the BUK7611-55B-VB MOSFET, efficient and reliable power control and management can be achieved in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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