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BUK7610-100B-VB Product details
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Product Overview: BUK7610-100B-VB
BUK7610-100B-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. The MOSFET has a drain-source voltage (V_DS) of 100V and a gate-source voltage (V_GS) of 20V (±V), a threshold voltage (V_th) of 2.5V, an on-resistance (R_DS(on)) of 23mΩ @ V_GS = 4.5V and 10mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of 100A. Using Trench technology, BUK7610-100B-VB provides excellent switching performance and low conduction losses, suitable for high-efficiency power supply and current control applications.
BUK7610-100B-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. The MOSFET has a drain-source voltage (V_DS) of 100V and a gate-source voltage (V_GS) of 20V (±V), a threshold voltage (V_th) of 2.5V, an on-resistance (R_DS(on)) of 23mΩ @ V_GS = 4.5V and 10mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of 100A. Using Trench technology, BUK7610-100B-VB provides excellent switching performance and low conduction losses, suitable for high-efficiency power supply and current control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 23(mΩ) | 10(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Drain-Source Voltage (V_DS):** 100V
- The maximum voltage that can be applied between the drain and the source.
- **Gate-Source Voltage (V_GS):** 20V (±V)
- The maximum voltage that can be applied between the gate and the source.
- **Threshold Voltage (V_th):** 2.5V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 23mΩ @ V_GS = 4.5V
- The resistance between the drain and the source when the MOSFET is in the "on" state, measured when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 10mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the “on” state, measured when the gate-source voltage is 10V.
- **Continuous drain current (I_D):** 100A
- The maximum continuous current that can flow through the drain terminal when the device is properly heatsinked.
- **Package type:** TO263
- The physical package of the MOSFET, which provides good thermal performance and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that this MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.
- **Drain-Source Voltage (V_DS):** 100V
- The maximum voltage that can be applied between the drain and the source.
- **Gate-Source Voltage (V_GS):** 20V (±V)
- The maximum voltage that can be applied between the gate and the source.
- **Threshold Voltage (V_th):** 2.5V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 23mΩ @ V_GS = 4.5V
- The resistance between the drain and the source when the MOSFET is in the "on" state, measured when the gate-source voltage is 4.5V.
- **On-resistance (R_DS(on)):** 10mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the “on” state, measured when the gate-source voltage is 10V.
- **Continuous drain current (I_D):** 100A
- The maximum continuous current that can flow through the drain terminal when the device is properly heatsinked.
- **Package type:** TO263
- The physical package of the MOSFET, which provides good thermal performance and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that this MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.
Domain and module applications：
Application Examples
**1. High Power Power Converters: **
- The BUK7610-100B-VB MOSFET can be used in high power DC-DC converters and switch mode power supplies (SMPS). Its high current handling capability and low on-resistance make it suitable for use in power modules, ensuring high efficiency and stable power output.
**2. Motor Drives: **
- In motor drive systems, the BUK7610-100B-VB is suitable for high power motor control, such as electric vehicles and industrial motor drives. Its high current capability and low power consumption ensure high efficiency and reliability of the drive system.
**3. Inverters: **
- This MOSFET performs well in inverter applications, especially for solar inverters and wind power inverters. Its high current and low on-resistance characteristics contribute to efficient energy conversion and power regulation.
**4. Battery Management System:**
- In the battery management system, BUK7610-100B-VB can be used as an efficient battery switch to control the battery charging and discharging path. Its high current handling capability and low power consumption ensure high efficiency and safety of battery management.
**5. Automotive Electronics:**
- This MOSFET is suitable for a variety of automotive electronic applications, including electric steering systems and power distribution systems. Its high current capability and low on-resistance ensure efficient operation and durability of automotive electronic systems.
By applying BUK7610-100B-VB MOSFET to these fields, designers can achieve efficient and reliable performance, meet the requirements of high current and low on-resistance, making it an ideal choice for modern electronic systems.
**1. High Power Power Converters: **
- The BUK7610-100B-VB MOSFET can be used in high power DC-DC converters and switch mode power supplies (SMPS). Its high current handling capability and low on-resistance make it suitable for use in power modules, ensuring high efficiency and stable power output.
**2. Motor Drives: **
- In motor drive systems, the BUK7610-100B-VB is suitable for high power motor control, such as electric vehicles and industrial motor drives. Its high current capability and low power consumption ensure high efficiency and reliability of the drive system.
**3. Inverters: **
- This MOSFET performs well in inverter applications, especially for solar inverters and wind power inverters. Its high current and low on-resistance characteristics contribute to efficient energy conversion and power regulation.
**4. Battery Management System:**
- In the battery management system, BUK7610-100B-VB can be used as an efficient battery switch to control the battery charging and discharging path. Its high current handling capability and low power consumption ensure high efficiency and safety of battery management.
**5. Automotive Electronics:**
- This MOSFET is suitable for a variety of automotive electronic applications, including electric steering systems and power distribution systems. Its high current capability and low on-resistance ensure efficient operation and durability of automotive electronic systems.
By applying BUK7610-100B-VB MOSFET to these fields, designers can achieve efficient and reliable performance, meet the requirements of high current and low on-resistance, making it an ideal choice for modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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