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BUK7607-55B-VB Product details
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BUK7607-55B-VB MOSFET Product Introduction
BUK7607-55B-VB is a high-performance N-channel MOSFET in a TO-263 package, designed for medium voltage and high current applications. It has a drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) of ±20V. The MOSFET has a threshold voltage (V_th) of 3V and an on-state resistance (R_DS(ON)) of 4 mΩ (at V_GS of 10V), and can withstand a continuous leakage current (I_D) of up to 150A. The BUK7607-55B-VB uses trench technology to provide excellent switching performance and high current handling capabilities, and is suitable for a variety of application scenarios requiring high current and high efficiency.
BUK7607-55B-VB is a high-performance N-channel MOSFET in a TO-263 package, designed for medium voltage and high current applications. It has a drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) of ±20V. The MOSFET has a threshold voltage (V_th) of 3V and an on-state resistance (R_DS(ON)) of 4 mΩ (at V_GS of 10V), and can withstand a continuous leakage current (I_D) of up to 150A. The BUK7607-55B-VB uses trench technology to provide excellent switching performance and high current handling capabilities, and is suitable for a variety of application scenarios requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package**: TO-263
- Provides excellent heat dissipation performance and a small package size, suitable for high-power and high-density circuit design.
2. **Configuration**: Single N-channel
- Suitable for efficient switch control, especially in applications requiring high current and low resistance.
3. **V_DS (drain-source voltage)**: 60V
- Suitable for medium-voltage applications and capable of handling higher voltage requirements.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to different control voltage requirements.
5. **V_th (threshold voltage)**: 3V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation at low voltages.
6. **R_DS(ON)**: 4 mΩ @ V_GS = 10V
- Extremely low on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 150A
- High current handling capability for applications requiring high current.
8. **Technology**: Trench
- Provides excellent switching performance and low on-resistance for a variety of high current applications.
1. **Package**: TO-263
- Provides excellent heat dissipation performance and a small package size, suitable for high-power and high-density circuit design.
2. **Configuration**: Single N-channel
- Suitable for efficient switch control, especially in applications requiring high current and low resistance.
3. **V_DS (drain-source voltage)**: 60V
- Suitable for medium-voltage applications and capable of handling higher voltage requirements.
4. **V_GS (gate-source voltage)**: ±20V
- Provides flexible gate drive voltage to adapt to different control voltage requirements.
5. **V_th (threshold voltage)**: 3V
- At this voltage, the MOSFET starts to turn on, ensuring stable operation at low voltages.
6. **R_DS(ON)**: 4 mΩ @ V_GS = 10V
- Extremely low on-resistance reduces power consumption and improves overall circuit efficiency.
7. **I_D (Continuous Drain Current)**: 150A
- High current handling capability for applications requiring high current.
8. **Technology**: Trench
- Provides excellent switching performance and low on-resistance for a variety of high current applications.
Domain and module applications：
Application Examples
**1. Power Management: **
- **Field**: Switch Mode Power Supply (SMPS)
- **Example**: In high-efficiency switching power supplies, the BUK7607-55B-VB is able to handle power modules with high current output. Its low on-resistance and high current carrying capacity make it an excellent performer in power management, helping to improve the stability and efficiency of the power supply, especially in high power density applications.
**2. Electric Vehicles: **
- **Field**: Battery Management System
- **Example**: In the battery management system of electric vehicles, the BUK7607-55B-VB can be used for high-side switch control to protect the battery from overcurrent and overvoltage. Its high current handling capability and low on-resistance ensure the safe and stable operation of the battery system, improving the overall reliability.
**3. Motor drive: **
- **Field**: Industrial automation
- **Example**: In motor drive circuits, BUK7607-55B-VB can provide efficient switch control, suitable for motor loads that require high current. Its high current carrying capacity ensures smooth operation of the motor, especially in high-power motor control applications in industrial automation.
**4. High-power LED drive: **
- **Field**: Lighting system
- **Example**: In high-power LED drive circuits, BUK7607-55B-VB can efficiently drive LED modules. Due to its low on-resistance, it can reduce power consumption and ensure stable brightness of the LED, suitable for LED lighting systems that require high power output.
**5. Automotive electronics: **
- **Field**: Automotive power system
- **Example**: In automotive electronic systems, BUK7607-55B-VB can be used for battery management and motor control. Its high current handling capability and low on-resistance ensure efficient and stable operation of automotive systems, and is suitable for high current and high power automotive applications.
In short, the BUK7607-55B-VB MOSFET is a medium voltage, high current handling switching device that is widely used in a variety of electronic applications with high power and high efficiency requirements. Its excellent switching performance and low on-resistance enable it to play an important role in a variety of fields.
**1. Power Management: **
- **Field**: Switch Mode Power Supply (SMPS)
- **Example**: In high-efficiency switching power supplies, the BUK7607-55B-VB is able to handle power modules with high current output. Its low on-resistance and high current carrying capacity make it an excellent performer in power management, helping to improve the stability and efficiency of the power supply, especially in high power density applications.
**2. Electric Vehicles: **
- **Field**: Battery Management System
- **Example**: In the battery management system of electric vehicles, the BUK7607-55B-VB can be used for high-side switch control to protect the battery from overcurrent and overvoltage. Its high current handling capability and low on-resistance ensure the safe and stable operation of the battery system, improving the overall reliability.
**3. Motor drive: **
- **Field**: Industrial automation
- **Example**: In motor drive circuits, BUK7607-55B-VB can provide efficient switch control, suitable for motor loads that require high current. Its high current carrying capacity ensures smooth operation of the motor, especially in high-power motor control applications in industrial automation.
**4. High-power LED drive: **
- **Field**: Lighting system
- **Example**: In high-power LED drive circuits, BUK7607-55B-VB can efficiently drive LED modules. Due to its low on-resistance, it can reduce power consumption and ensure stable brightness of the LED, suitable for LED lighting systems that require high power output.
**5. Automotive electronics: **
- **Field**: Automotive power system
- **Example**: In automotive electronic systems, BUK7607-55B-VB can be used for battery management and motor control. Its high current handling capability and low on-resistance ensure efficient and stable operation of automotive systems, and is suitable for high current and high power automotive applications.
In short, the BUK7607-55B-VB MOSFET is a medium voltage, high current handling switching device that is widely used in a variety of electronic applications with high power and high efficiency requirements. Its excellent switching performance and low on-resistance enable it to play an important role in a variety of fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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