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BUK7606-55A-VB Product details
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Product Overview: BUK7606-55A-VB
BUK7606-55A-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. The MOSFET has a drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) of 20V (±V), a threshold voltage (V_th) of 3V, an extremely low on-resistance (R_DS(on)) of 4mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of 150A. Using Trench technology, BUK7606-55A-VB provides excellent switching performance and low conduction losses, suitable for high-efficiency power supply and current control applications.
BUK7606-55A-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high current and low on-resistance applications. The MOSFET has a drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) of 20V (±V), a threshold voltage (V_th) of 3V, an extremely low on-resistance (R_DS(on)) of 4mΩ @ V_GS = 10V, and a maximum continuous drain current (I_D) of 150A. Using Trench technology, BUK7606-55A-VB provides excellent switching performance and low conduction losses, suitable for high-efficiency power supply and current control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Drain-Source Voltage (V_DS):** 60V
- The maximum voltage that can be withstood between the drain and source.
- **Gate-Source Voltage (V_GS):** 20V (±V)
- The maximum voltage that can be applied between the gate and source.
- **Threshold Voltage (V_th):** 3V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 4mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the "on" state, measured when the gate-source voltage is 10V.
- **Continuous Drain Current (I_D):** 150A
- The maximum continuous current that can flow through the drain terminal when the device is properly cooled.
- **Package Type:** TO263
- The physical package of the MOSFET, providing good heat dissipation and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that the MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.
- **Drain-Source Voltage (V_DS):** 60V
- The maximum voltage that can be withstood between the drain and source.
- **Gate-Source Voltage (V_GS):** 20V (±V)
- The maximum voltage that can be applied between the gate and source.
- **Threshold Voltage (V_th):** 3V
- The minimum gate-source voltage required to turn on the MOSFET.
- **On-Resistance (R_DS(on)):** 4mΩ @ V_GS = 10V
- The resistance between the drain and source when the MOSFET is in the "on" state, measured when the gate-source voltage is 10V.
- **Continuous Drain Current (I_D):** 150A
- The maximum continuous current that can flow through the drain terminal when the device is properly cooled.
- **Package Type:** TO263
- The physical package of the MOSFET, providing good heat dissipation and mechanical strength.
- **Configuration:** Unipolar N-channel
- Indicates that the MOSFET has a single N-channel for conducting electricity.
- **Technology:** Trench
- Indicates that the MOSFET is manufactured using Trench technology, providing excellent switching performance and low conduction losses.
Domain and module applications：
Application Examples
**1. High-efficiency power converters: **
- The BUK7606-55A-VB MOSFET can be used in high-efficiency DC-DC converters and switch mode power supplies (SMPS). Its low on-resistance and high current handling capability ensure efficient power conversion and regulation for applications such as server power supplies and telecom equipment power supplies.
**2. Motor drives: **
- In motor drive systems, the BUK7606-55A-VB is able to handle high currents and ensure low power losses for high-power applications such as industrial motor drives, power tools, and electric vehicles.
**3. Inverters: **
- This MOSFET performs well in inverter applications, especially for solar inverters and uninterruptible power supply (UPS) systems. Its high current and low on-resistance characteristics ensure efficient energy conversion and stable power output.
**4. Battery Management System:**
- In the battery management system, BUK7606-55A-VB can be used for efficient battery charging and discharging control. Its high current handling capability and low on-resistance characteristics ensure the reliability and high performance of the battery management system.
**5. Automotive Electronics:**
- This MOSFET is suitable for automotive electronic applications such as electric steering systems, body control modules, and power distribution systems. Its high current handling capability and durability ensure the reliability and performance of automotive electronic systems.
By applying the BUK7606-55A-VB MOSFET to these fields, designers can achieve efficient and reliable performance that meets the requirements of high current and low on-resistance, making it an ideal choice for modern electronic systems.
**1. High-efficiency power converters: **
- The BUK7606-55A-VB MOSFET can be used in high-efficiency DC-DC converters and switch mode power supplies (SMPS). Its low on-resistance and high current handling capability ensure efficient power conversion and regulation for applications such as server power supplies and telecom equipment power supplies.
**2. Motor drives: **
- In motor drive systems, the BUK7606-55A-VB is able to handle high currents and ensure low power losses for high-power applications such as industrial motor drives, power tools, and electric vehicles.
**3. Inverters: **
- This MOSFET performs well in inverter applications, especially for solar inverters and uninterruptible power supply (UPS) systems. Its high current and low on-resistance characteristics ensure efficient energy conversion and stable power output.
**4. Battery Management System:**
- In the battery management system, BUK7606-55A-VB can be used for efficient battery charging and discharging control. Its high current handling capability and low on-resistance characteristics ensure the reliability and high performance of the battery management system.
**5. Automotive Electronics:**
- This MOSFET is suitable for automotive electronic applications such as electric steering systems, body control modules, and power distribution systems. Its high current handling capability and durability ensure the reliability and performance of automotive electronic systems.
By applying the BUK7606-55A-VB MOSFET to these fields, designers can achieve efficient and reliable performance that meets the requirements of high current and low on-resistance, making it an ideal choice for modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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