BUK7212-55B-VB Product details
Product introduction:
BUK7212-55B-VB is a high-performance single N-channel MOSFET provided by NXP Semiconductors in TO-252 package. This MOSFET adopts advanced Trench technology and has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. At a gate-source voltage of 4.5V, its on-resistance is 13mΩ, and at a gate-source voltage of 10V, the on-resistance is further reduced to 10mΩ. BUK7212-55B-VB supports a continuous drain current (ID) of up to 58A, suitable for application scenarios requiring high current and low conduction loss. Its excellent switching performance and low power consumption characteristics make it excel in power management, power conversion, and motor drive.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 13(mΩ) | 10(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter | Value | Unit |
|------------------------|--------------------------|--------|
| Product Model | BUK7212-55B-VB | |
| Package | TO-252 | |
| Configuration | Single N-channel | |
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 2.5 | V |
| On-Resistance (RDS(ON)) | 13 (VGS = 4.5V) | mΩ |
| | 10 (VGS = 10V) | mΩ |
| Continuous Drain Current (ID) | 58 | A |
| Transient pulse drain current (ID(pulse)) | 232 | A |
| Maximum power dissipation (Ptot) | 125 | W |
| Operating temperature range | -55 to +175 | °C |
| Storage temperature range | -55 to +175 | °C |
| Technology | Trench | |
Domain and module applications:
The high current handling capability and low on-resistance of BUK7212-55B-VB enable it to excel in many fields and applications. Here are a few specific application examples:
1. **Power management**: In high-power switching power supplies (SMPS) and DC-DC converters, BUK7212-55B-VB can be used as an efficient switching element. The low on-resistance helps reduce energy loss and improve power conversion efficiency. This is essential for high-performance power supply and energy-saving design.
2. **Motor drive**: Due to its ability to handle high current loads, this MOSFET is ideal for electric vehicles, power tools, and industrial motor drive systems. It enables efficient motor control and precise speed regulation, meeting the requirements for high current and high reliability.
3. **Power conversion system**: In industrial power converters and inverters, BUK7212-55B-VB can handle large current loads to ensure system stability and reliability. It is widely used in solar inverters and uninterruptible power supplies (UPS) to ensure the efficiency and stability of power conversion.
4. **Battery Management System**: In the battery management system (BMS), BUK7212-55B-VB is able to handle high current loads, provide overcurrent protection and battery switching functions. Its low on-resistance and high current capability can improve the safety and performance of the battery system and ensure stable operation under various working conditions.
These application examples show the key role of BUK7212-55B-VB in scenarios with high current handling, low conduction loss and efficient switching.
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