中文
English
BUK6E3R2-55C-VB Product details
Back to previous pageProduct introduction：
BUK6E3R2-55C-VB MOSFET Product Introduction
**BUK6E3R2-55C-VB** is a high-performance unipolar N-channel MOSFET using Trench technology and packaged in TO262. This MOSFET is designed to handle medium voltage applications, providing extremely low on-resistance and high current carrying capacity. This makes it perform well in high-power and high-efficiency electronic systems, and is particularly suitable for applications that require high switching speeds and low power consumption.
**BUK6E3R2-55C-VB** is a high-performance unipolar N-channel MOSFET using Trench technology and packaged in TO262. This MOSFET is designed to handle medium voltage applications, providing extremely low on-resistance and high current carrying capacity. This makes it perform well in high-power and high-efficiency electronic systems, and is particularly suitable for applications that require high switching speeds and low power consumption.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 2.8(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(on))**: 2.8mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 210A
- **Technology**: Trench technology
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(on))**: 2.8mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 210A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and module examples
**BUK6E3R2-55C-VB** is mainly applicable to the following fields and modules:
1. **High-efficiency power management**: Due to its extremely low on-resistance (2.8mΩ @ VGS = 10V) and high current capability (210A), BUK6E3R2-55C-VB is very suitable for efficient power management systems, including DC-DC converters, power supplies, and power distribution modules. It can effectively reduce power consumption and improve the overall efficiency and stability of the system.
2. **Electric vehicles**: In electric vehicle applications, this MOSFET can be used in battery management systems (BMS) and electric drive systems. Its high current handling capability and low on-resistance help improve the efficiency and safety of batteries and drive systems, especially under high power and high load conditions.
3. **Industrial power and control**: In industrial power and control systems, this MOSFET is suitable for high-power switching applications such as motor drives and high-power switching power supplies. Its high current capacity and low on-resistance ensure stable and efficient operation under high load conditions, meeting the needs of industrial environments.
4. **High-power switching applications**: This MOSFET can be used in various high-power switching applications such as power converters and inverters. Its high current capability and low on-resistance enable it to provide stable performance under high power conditions, ensuring efficient and reliable power conversion processes.
In summary, the TO262 package, low on-resistance and high current carrying capacity of the BUK6E3R2-55C-VB MOSFET enable it to excel in power management, electric vehicles, industrial power supplies and high-power switching applications. Its Trench technology ensures reliable performance in a variety of high-power and high-efficiency applications.
**BUK6E3R2-55C-VB** is mainly applicable to the following fields and modules:
1. **High-efficiency power management**: Due to its extremely low on-resistance (2.8mΩ @ VGS = 10V) and high current capability (210A), BUK6E3R2-55C-VB is very suitable for efficient power management systems, including DC-DC converters, power supplies, and power distribution modules. It can effectively reduce power consumption and improve the overall efficiency and stability of the system.
2. **Electric vehicles**: In electric vehicle applications, this MOSFET can be used in battery management systems (BMS) and electric drive systems. Its high current handling capability and low on-resistance help improve the efficiency and safety of batteries and drive systems, especially under high power and high load conditions.
3. **Industrial power and control**: In industrial power and control systems, this MOSFET is suitable for high-power switching applications such as motor drives and high-power switching power supplies. Its high current capacity and low on-resistance ensure stable and efficient operation under high load conditions, meeting the needs of industrial environments.
4. **High-power switching applications**: This MOSFET can be used in various high-power switching applications such as power converters and inverters. Its high current capability and low on-resistance enable it to provide stable performance under high power conditions, ensuring efficient and reliable power conversion processes.
In summary, the TO262 package, low on-resistance and high current carrying capacity of the BUK6E3R2-55C-VB MOSFET enable it to excel in power management, electric vehicles, industrial power supplies and high-power switching applications. Its Trench technology ensures reliable performance in a variety of high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
