中文
English
BUK6E2R0-30C-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**BUK6E2R0-30C-VB** is a unipolar N-channel MOSFET using Trench technology in TO262 package. This MOSFET has extremely low on-resistance and high current carrying capacity, making it ideal for high-power and high-efficiency switching applications. Its high-performance features make it perform well in power management, electric vehicles and other high-current applications.
**BUK6E2R0-30C-VB** is a unipolar N-channel MOSFET using Trench technology in TO262 package. This MOSFET has extremely low on-resistance and high current carrying capacity, making it ideal for high-power and high-efficiency switching applications. Its high-performance features make it perform well in power management, electric vehicles and other high-current applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | 3.24(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 3.24mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 3.24mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
**BUK6E2R0-30C-VB**'s high performance makes it suitable for multiple high-power and high-efficiency applications, including:
1. **Power management**: Due to its extremely low on-resistance and high current capability, this MOSFET is ideal for use in high-efficiency power management systems such as DC-DC converters and power modules. In these applications, it can effectively manage and convert current, improve the overall efficiency of the system and reduce energy loss.
2. **Electric vehicles**: In the power electronics systems of electric vehicles, such as battery management systems (BMS) and motor drive systems, this MOSFET can be used for high-current switching to ensure system stability and efficiency. This is crucial to improving the performance and endurance of electric vehicles.
3. **Inverter systems**: In high-power inverter systems, such as solar photovoltaic inverters and industrial inverters, this MOSFET can handle high-power switching operations, provide efficient power conversion, and ensure stable system operation.
4. **High Power Switch**: Suitable for high power switching applications, such as high power power supplies and load switches. This MOSFET can effectively control the flow of large currents, provide stable switching performance, and improve system reliability.
In summary, BUK6E2R0-30C-VB is a high performance, high current carrying capacity, and low on-resistance MOSFET, suitable for a variety of high power power management and switching applications.
**BUK6E2R0-30C-VB**'s high performance makes it suitable for multiple high-power and high-efficiency applications, including:
1. **Power management**: Due to its extremely low on-resistance and high current capability, this MOSFET is ideal for use in high-efficiency power management systems such as DC-DC converters and power modules. In these applications, it can effectively manage and convert current, improve the overall efficiency of the system and reduce energy loss.
2. **Electric vehicles**: In the power electronics systems of electric vehicles, such as battery management systems (BMS) and motor drive systems, this MOSFET can be used for high-current switching to ensure system stability and efficiency. This is crucial to improving the performance and endurance of electric vehicles.
3. **Inverter systems**: In high-power inverter systems, such as solar photovoltaic inverters and industrial inverters, this MOSFET can handle high-power switching operations, provide efficient power conversion, and ensure stable system operation.
4. **High Power Switch**: Suitable for high power switching applications, such as high power power supplies and load switches. This MOSFET can effectively control the flow of large currents, provide stable switching performance, and improve system reliability.
In summary, BUK6E2R0-30C-VB is a high performance, high current carrying capacity, and low on-resistance MOSFET, suitable for a variety of high power power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
