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BUK664R4-55C-VB Product details
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1. BUK664R4-55C-VB Product Introduction
BUK664R4-55C-VB is a high-performance single N-channel MOSFET provided by NXP Semiconductors, packaged in TO-263. This MOSFET is designed with advanced Trench technology and has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. At a gate-source voltage of 10V, its on-resistance is as low as 4mΩ, and it can support a continuous drain current (ID) of up to 150A. The low on-resistance and high current handling capability of the BUK664R4-55C-VB enable it to excel in high-efficiency switching and power conversion applications, and is very suitable for scenarios requiring high current and low conduction losses.
BUK664R4-55C-VB is a high-performance single N-channel MOSFET provided by NXP Semiconductors, packaged in TO-263. This MOSFET is designed with advanced Trench technology and has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. At a gate-source voltage of 10V, its on-resistance is as low as 4mΩ, and it can support a continuous drain current (ID) of up to 150A. The low on-resistance and high current handling capability of the BUK664R4-55C-VB enable it to excel in high-efficiency switching and power conversion applications, and is very suitable for scenarios requiring high current and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. BUK664R4-55C-VB Detailed Parameter Description
| Parameter| Value| Unit|
|------------------------|--------------------------|--------|
| Product Model| BUK664R4-55C-VB | |
| Package| TO-263 | |
| Configuration| Single N-channel| |
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 3 | V |
| On-Resistance (RDS(ON)) | 4 (VGS = 10V) | mΩ |
| Gate Current (IG) | 100 | nA |
| Continuous Drain Current (ID) | 150 | A |
| Transient pulse drain current (ID(pulse)) | 300 | A |
| Maximum power dissipation (Ptot) | 200 | W |
| Operating temperature range | -55 to +175 | °C |
| Storage temperature range | -55 to +175 | °C |
| Technology | Trench | |
| Parameter| Value| Unit|
|------------------------|--------------------------|--------|
| Product Model| BUK664R4-55C-VB | |
| Package| TO-263 | |
| Configuration| Single N-channel| |
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 3 | V |
| On-Resistance (RDS(ON)) | 4 (VGS = 10V) | mΩ |
| Gate Current (IG) | 100 | nA |
| Continuous Drain Current (ID) | 150 | A |
| Transient pulse drain current (ID(pulse)) | 300 | A |
| Maximum power dissipation (Ptot) | 200 | W |
| Operating temperature range | -55 to +175 | °C |
| Storage temperature range | -55 to +175 | °C |
| Technology | Trench | |
Domain and module applications：
3. Application fields and module examples
The high current handling capability and extremely low on-resistance of BUK664R4-55C-VB make it excellent in many fields and applications. Here are some specific application examples:
1. **Power management**: In high-power switching power supplies (SMPS) and DC-DC converters, BUK664R4-55C-VB can be used as an efficient switching element. The low on-resistance helps reduce energy loss and improve power conversion efficiency. This is critical for high-performance power supply and energy-saving design.
2. **Motor control**: Due to its ability to handle high current loads, this MOSFET is ideal for electric vehicles, power tools and industrial motor drive systems. It enables efficient motor control and precise speed regulation to meet the requirements of high current and high reliability.
3. **Power Conversion System**: In industrial power converters and inverters, BUK664R4-55C-VB can handle high current loads, ensuring system stability and reliability. It is widely used in solar inverters and uninterruptible power supplies (UPS) to ensure efficiency and stability of power conversion.
4. **Battery Management System**: In a battery management system (BMS), this MOSFET is able to handle high current loads, provide overcurrent protection and battery switching functions. Its low on-resistance and high current capability can improve the safety and performance of the battery system, ensuring stable operation under various operating conditions.
These application examples demonstrate the key role of BUK664R4-55C-VB in scenarios with high current handling, low conduction losses and efficient switching.
The high current handling capability and extremely low on-resistance of BUK664R4-55C-VB make it excellent in many fields and applications. Here are some specific application examples:
1. **Power management**: In high-power switching power supplies (SMPS) and DC-DC converters, BUK664R4-55C-VB can be used as an efficient switching element. The low on-resistance helps reduce energy loss and improve power conversion efficiency. This is critical for high-performance power supply and energy-saving design.
2. **Motor control**: Due to its ability to handle high current loads, this MOSFET is ideal for electric vehicles, power tools and industrial motor drive systems. It enables efficient motor control and precise speed regulation to meet the requirements of high current and high reliability.
3. **Power Conversion System**: In industrial power converters and inverters, BUK664R4-55C-VB can handle high current loads, ensuring system stability and reliability. It is widely used in solar inverters and uninterruptible power supplies (UPS) to ensure efficiency and stability of power conversion.
4. **Battery Management System**: In a battery management system (BMS), this MOSFET is able to handle high current loads, provide overcurrent protection and battery switching functions. Its low on-resistance and high current capability can improve the safety and performance of the battery system, ensuring stable operation under various operating conditions.
These application examples demonstrate the key role of BUK664R4-55C-VB in scenarios with high current handling, low conduction losses and efficient switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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