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BUK663R5-55C-VB Product details

Product introduction:

BUK663R5-55C-VB Product Introduction

BUK663R5-55C-VB is a high-performance single N-channel MOSFET in a TO263 package designed for high current and low resistance applications. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V. It uses advanced trench technology to provide extremely low on-resistance. The on-resistance is 12mΩ at VGS of 4.5V, 3.2mΩ at VGS of 10V, and the maximum drain current (ID) is 210A. BUK663R5-55C-VB excels in applications that require high current handling and low power consumption, and is suitable for a variety of high-efficiency power management and motor drive applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 210A 12(mΩ) 3.2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 210A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 210A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
BUK663R5-55C-VB Detailed parameter description

| Parameter| Value| Unit|
|------------------|-------------------|------|
| Package type| TO263 | |
| Configuration| Single N-channel| |
| Drain-source voltage (VDS) | 60 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Threshold voltage (Vth) | 3.0 | V |
| On-resistance (RDS(ON)) | 12 (VGS=4.5V) | mΩ |
| On-resistance (RDS(ON)) | 3.2 (VGS=10V) | mΩ |
| Maximum drain current (ID) | 210 | A |
| Technology| Trench | |

Domain and module applications:

BUK663R5-55C-VB Applications and Modules

1. **High-Efficiency Power Switching**:
BUK663R5-55C-VB excels in high-efficiency power switching applications, especially where high current handling and low on-resistance are required. Its 210A drain current capability and low on-resistance help improve the efficiency of the power system and reduce power losses.

2. **Motor Drives**:
In motor drive applications, this MOSFET can handle high current loads and is suitable for driving DC motors and brushless motors (BLDC). Its high current capability and low on-resistance ensure smooth operation and efficient control of the motor.

3. **DC-DC Converters**:
BUK663R5-55C-VB is suitable for applications with high current and efficient conversion in DC-DC converters. Its extremely low on-resistance helps improve converter efficiency, reduce power losses, and enhance overall system performance.

4. **Battery Management Systems**:
In battery management systems, this MOSFET is able to effectively control high current loads and is suitable for protection circuits and load switches. Its high current handling capability and low on-resistance help improve battery life and system stability.

5. **Power Supply Modules**:
BUK663R5-55C-VB is suitable for power supply modules, especially in applications that require high current switching. Its high current capability and low on-resistance enable it to effectively manage high power demands and provide stable and reliable performance.

With its high current handling capability and extremely low on-resistance, BUK663R5-55C-VB is suitable for a variety of electronic applications that require efficient and stable performance, providing a reliable solution for power management, motor drive, and high-efficiency switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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