BUK663R5-30C-VB Product details
Product introduction:
BUK663R2-40C-VB is a single N-channel power MOSFET produced by Philips Semiconductors (now NXP Semiconductors), packaged in TO-263. This MOSFET adopts advanced trench technology and has extremely low on-resistance and high current handling capability. Its design goal is to provide high-performance solutions for high-efficiency power management and switching applications, especially for scenarios that require high current and low power consumption.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 3.2(mΩ) | 2.3(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
1. **Package type**: TO-263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 40V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**:
- 2mΩ @ VGS=10V
- 2.5mΩ @ VGS=4.5V
7. **Drain current (ID)**: 150A
8. **Technology type**: Trench
Domain and module applications:
**Application fields**:
1. **High-efficiency power management**: Due to its extremely low on-resistance and high current handling capability, BUK663R2-40C-VB is very suitable for use in high-efficiency power management systems, especially in switch mode power supply (SMPS) applications that require high current and low power consumption. It can significantly improve the efficiency of the power supply and reduce power loss.
2. **Motor drive**: In motor drive applications, this MOSFET can be used to control the start, stop and speed regulation of the motor. Its high current handling capability and low on-resistance help improve the overall efficiency and reliability of the motor drive system, and is suitable for high-performance power tools, industrial robots and electric vehicles.
3. **High-power switching**: BUK663R2-40C-VB is also suitable for high-power switching applications, including power converters and load switches. Its low on-resistance and high current carrying capacity enable it to effectively manage high-power loads, and is suitable for a variety of high-power electronic devices and industrial applications.
**Module Examples**:
1. **High-efficiency DC-DC converter module**: BUK663R2-40C-VB can be integrated in high-efficiency DC-DC converter modules to provide stable voltage conversion. These modules are widely used in computer power supplies, communication equipment, and high-performance consumer electronics.
2. **High-current motor drive module**: In the motor drive module, BUK663R2-40C-VB can be used as a switching element in an H-bridge circuit to control the operation of high-current motors. Suitable for electric vehicles, power tools, and industrial automation systems.
3. **Power switch module**: This MOSFET is also suitable for high-power switch modules for switching and controlling high-power loads. Such modules are often used in industrial equipment, power management, and energy conversion systems.
In summary, BUK663R2-40C-VB is suitable for applications such as high-efficiency power management, motor drive and high-power switching due to its extremely low on-resistance and high current handling capability, providing efficient and reliable solutions for these fields.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image