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BUK663R2-40C-VB Product details
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1. BUK663R2-40C-VB Product Introduction
BUK663R2-40C-VB is a high-performance single N-channel MOSFET packaged in TO263 and using advanced Trench technology. This MOSFET is designed for high-current applications and has a withstand voltage of 40V and a maximum gate-source voltage of 20V. Its threshold voltage is 3V, and its on-resistance is 2.5mΩ at a 4.5V gate drive and 2mΩ at a 10V gate drive. BUK663R2-40C-VB can withstand drain currents up to 150A, has extremely low on-resistance and high current handling capabilities, and is ideal for high-efficiency switching and power management applications.
BUK663R2-40C-VB is a high-performance single N-channel MOSFET packaged in TO263 and using advanced Trench technology. This MOSFET is designed for high-current applications and has a withstand voltage of 40V and a maximum gate-source voltage of 20V. Its threshold voltage is 3V, and its on-resistance is 2.5mΩ at a 4.5V gate drive and 2mΩ at a 10V gate drive. BUK663R2-40C-VB can withstand drain currents up to 150A, has extremely low on-resistance and high current handling capabilities, and is ideal for high-efficiency switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2.5(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. BUK663R2-40C-VB detailed parameter description
- **Model**: BUK663R2-40C-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Withstand voltage VDS**: 40V
- **Gate-source voltage VGS**: 20V (±)
- **Threshold voltage Vth**: 3V
- **On-resistance RDS(ON)**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum continuous drain current ID**: 150A
- **Technology**: Trench
- **Model**: BUK663R2-40C-VB
- **Package**: TO263
- **Configuration**: Single N-channel
- **Withstand voltage VDS**: 40V
- **Gate-source voltage VGS**: 20V (±)
- **Threshold voltage Vth**: 3V
- **On-resistance RDS(ON)**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Maximum continuous drain current ID**: 150A
- **Technology**: Trench
Domain and module applications：
III. Application fields and module examples
BUK663R2-40C-VB excels in the following fields and modules and is suitable for multiple high-current, high-efficiency application scenarios:
1. **High-efficiency power switches**: Due to its ultra-low on-resistance and high current handling capability, BUK663R2-40C-VB is ideal for high-efficiency power switches such as DC-DC converters and switching power supplies. This can significantly improve the overall efficiency of the power management system and reduce power losses.
2. **Electric vehicles**: In electric vehicle applications, BUK663R2-40C-VB can be used in motor drive systems and battery management systems. Its high current carrying capacity and low on-resistance ensure stable operation and high efficiency of electric vehicles under high load conditions.
3. **Industrial motor control**: In industrial automation and motor control systems, BUK663R2-40C-VB can stably control the start, stop and operation of high-power motors. The high current handling capability and low on-resistance of this MOSFET make it suitable for use in high-power industrial equipment.
4. **Power Management System**: In power management systems that require high current handling, such as high-power power distribution and battery protection systems, BUK663R2-40C-VB can provide reliable switching functions to ensure efficient and stable operation of the system.
These application examples demonstrate the wide applicability of BUK663R2-40C-VB in high-current and high-efficiency switching applications, making it an ideal choice for a variety of high-efficiency electronic devices and control systems.
BUK663R2-40C-VB excels in the following fields and modules and is suitable for multiple high-current, high-efficiency application scenarios:
1. **High-efficiency power switches**: Due to its ultra-low on-resistance and high current handling capability, BUK663R2-40C-VB is ideal for high-efficiency power switches such as DC-DC converters and switching power supplies. This can significantly improve the overall efficiency of the power management system and reduce power losses.
2. **Electric vehicles**: In electric vehicle applications, BUK663R2-40C-VB can be used in motor drive systems and battery management systems. Its high current carrying capacity and low on-resistance ensure stable operation and high efficiency of electric vehicles under high load conditions.
3. **Industrial motor control**: In industrial automation and motor control systems, BUK663R2-40C-VB can stably control the start, stop and operation of high-power motors. The high current handling capability and low on-resistance of this MOSFET make it suitable for use in high-power industrial equipment.
4. **Power Management System**: In power management systems that require high current handling, such as high-power power distribution and battery protection systems, BUK663R2-40C-VB can provide reliable switching functions to ensure efficient and stable operation of the system.
These application examples demonstrate the wide applicability of BUK663R2-40C-VB in high-current and high-efficiency switching applications, making it an ideal choice for a variety of high-efficiency electronic devices and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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