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BUK662R5-30C-VB Product details
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BUK662R5-30C-VB MOSFET Product Introduction
**BUK662R5-30C-VB** is a high-performance unipolar N-channel MOSFET using Trench technology and packaged in TO263. This MOSFET is designed to handle medium voltage applications and has extremely low on-resistance and high current carrying capacity. This makes it excellent in high-power and high-efficiency electronic systems, especially in applications that require high switching speeds and low power consumption.
**BUK662R5-30C-VB** is a high-performance unipolar N-channel MOSFET using Trench technology and packaged in TO263. This MOSFET is designed to handle medium voltage applications and has extremely low on-resistance and high current carrying capacity. This makes it excellent in high-power and high-efficiency electronic systems, especially in applications that require high switching speeds and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 3.2(mΩ) | 2.3(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(on))**:
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and module examples
**BUK662R5-30C-VB** is mainly suitable for the following fields and modules:
1. **High-efficiency power management**: Due to its ultra-low on-resistance (2.3mΩ @ VGS = 10V) and high current capability (150A), BUK662R5-30C-VB is very suitable for efficient power management systems, including DC-DC converters and power supplies. It can significantly reduce power consumption and improve the overall efficiency and stability of the system.
2. **Electric vehicles**: In the power system of electric vehicles, this MOSFET can be used in battery management systems (BMS) and electric drive systems. Its high current handling capability and low on-resistance help improve the efficiency and safety of batteries and drive systems.
3. **Industrial applications**: In industrial power and control systems, this MOSFET can be used in high-power switching applications such as motor drives and high-power switching power supplies. Its high current capacity and low on-resistance ensure stable and efficient operation under high load conditions.
4. **Consumer Electronics**: In power management modules of consumer electronics such as computers, laptops and TVs, BUK662R5-30C-VB can be used to control and optimize power supply, improving the energy efficiency and performance of the products.
In summary, the TO263 package, low on-resistance and high current carrying capacity of the BUK662R5-30C-VB MOSFET make it an excellent performer in power management, electric vehicles, industrial applications and consumer electronics. Its Trench technology ensures reliable performance in a variety of high-power and high-efficiency applications.
**BUK662R5-30C-VB** is mainly suitable for the following fields and modules:
1. **High-efficiency power management**: Due to its ultra-low on-resistance (2.3mΩ @ VGS = 10V) and high current capability (150A), BUK662R5-30C-VB is very suitable for efficient power management systems, including DC-DC converters and power supplies. It can significantly reduce power consumption and improve the overall efficiency and stability of the system.
2. **Electric vehicles**: In the power system of electric vehicles, this MOSFET can be used in battery management systems (BMS) and electric drive systems. Its high current handling capability and low on-resistance help improve the efficiency and safety of batteries and drive systems.
3. **Industrial applications**: In industrial power and control systems, this MOSFET can be used in high-power switching applications such as motor drives and high-power switching power supplies. Its high current capacity and low on-resistance ensure stable and efficient operation under high load conditions.
4. **Consumer Electronics**: In power management modules of consumer electronics such as computers, laptops and TVs, BUK662R5-30C-VB can be used to control and optimize power supply, improving the energy efficiency and performance of the products.
In summary, the TO263 package, low on-resistance and high current carrying capacity of the BUK662R5-30C-VB MOSFET make it an excellent performer in power management, electric vehicles, industrial applications and consumer electronics. Its Trench technology ensures reliable performance in a variety of high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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