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BUK662R4-40C-VB Product details
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BUK662R4-40C-VB Product Introduction
**BUK662R4-40C-VB** is a high-performance single N-channel power MOSFET in TO263 package. Made with Trench technology, this MOSFET has extremely low on-resistance and high current carrying capacity, and is designed for high-efficiency power management and switching applications. Its characteristics enable it to work stably under high load conditions, and is suitable for scenarios that require high efficiency and high reliability.
**BUK662R4-40C-VB** is a high-performance single N-channel power MOSFET in TO263 package. Made with Trench technology, this MOSFET has extremely low on-resistance and high current carrying capacity, and is designed for high-efficiency power management and switching applications. Its characteristics enable it to work stably under high load conditions, and is suitable for scenarios that require high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2.5(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package：** TO263
- **Configuration：** Single N-channel
- **Maximum drain-source voltage (VDS):** 40V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(on)):**
- 2.5mΩ (at VGS = 4.5V)
- 2mΩ (at VGS = 10V)
- **Maximum continuous drain current (ID):** 150A
- **Technology：** Trench
- **Package：** TO263
- **Configuration：** Single N-channel
- **Maximum drain-source voltage (VDS):** 40V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(on)):**
- 2.5mΩ (at VGS = 4.5V)
- 2mΩ (at VGS = 10V)
- **Maximum continuous drain current (ID):** 150A
- **Technology：** Trench
Domain and module applications：
Applicable fields and module examples
**BUK662R4-40C-VB**'s high current and low on-resistance characteristics make it very suitable for the following fields and modules:
1. **Efficient power management:**
Due to its low on-resistance and high current carrying capacity, BUK662R4-40C-VB is an ideal choice for efficient power conversion modules. For example, in DC-DC converters and power supplies, this MOSFET can effectively reduce power consumption, improve system efficiency, and handle high load conditions.
2. **Electric vehicles:**
In the power system of electric vehicles, this MOSFET can be used in the battery management system (BMS) to control the charging and discharging process of the battery. Its high current handling capability and low power consumption characteristics ensure efficient and safe battery management, optimizing battery performance and life.
3. **Switching Power Supply: **
In high-power switching power supply applications such as inverters and power amplifiers, the high current capability and low on-resistance of BUK662R4-40C-VB can maintain high efficiency and stability during the switching process, and is suitable for high-load and high-frequency switching applications.
4. **Industrial Automation: **
In industrial automation systems such as motor drives and load control, BUK662R4-40C-VB can provide stable current switching capabilities. Its low on-resistance and high current carrying capacity make it suitable for high-load and high-efficiency industrial applications.
5. **Consumer Electronics: **
In power management modules of consumer electronics such as laptops and TVs, this MOSFET can be used to optimize power supply and improve product stability and energy efficiency. Its excellent switching performance and low energy consumption characteristics help improve the performance and service life of the overall equipment.
In short, BUK662R4-40C-VB is a high-performance, high-reliability MOSFET that can meet the application requirements of high current and low power consumption. It is widely used in power management, electric vehicles, switching power supplies and industrial automation.
**BUK662R4-40C-VB**'s high current and low on-resistance characteristics make it very suitable for the following fields and modules:
1. **Efficient power management:**
Due to its low on-resistance and high current carrying capacity, BUK662R4-40C-VB is an ideal choice for efficient power conversion modules. For example, in DC-DC converters and power supplies, this MOSFET can effectively reduce power consumption, improve system efficiency, and handle high load conditions.
2. **Electric vehicles:**
In the power system of electric vehicles, this MOSFET can be used in the battery management system (BMS) to control the charging and discharging process of the battery. Its high current handling capability and low power consumption characteristics ensure efficient and safe battery management, optimizing battery performance and life.
3. **Switching Power Supply: **
In high-power switching power supply applications such as inverters and power amplifiers, the high current capability and low on-resistance of BUK662R4-40C-VB can maintain high efficiency and stability during the switching process, and is suitable for high-load and high-frequency switching applications.
4. **Industrial Automation: **
In industrial automation systems such as motor drives and load control, BUK662R4-40C-VB can provide stable current switching capabilities. Its low on-resistance and high current carrying capacity make it suitable for high-load and high-efficiency industrial applications.
5. **Consumer Electronics: **
In power management modules of consumer electronics such as laptops and TVs, this MOSFET can be used to optimize power supply and improve product stability and energy efficiency. Its excellent switching performance and low energy consumption characteristics help improve the performance and service life of the overall equipment.
In short, BUK662R4-40C-VB is a high-performance, high-reliability MOSFET that can meet the application requirements of high current and low power consumption. It is widely used in power management, electric vehicles, switching power supplies and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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