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BUK661R9-40C-VB Product details
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Product Introduction
**BUK661R9-40C-VB** is a unipolar N-channel MOSFET using Trench technology in TO263 package. This MOSFET has extremely low on-resistance and high current carrying capacity, making it ideal for efficient power management and switching applications. Its high performance features enable it to perform well in high power and high frequency applications.
**BUK661R9-40C-VB** is a unipolar N-channel MOSFET using Trench technology in TO263 package. This MOSFET has extremely low on-resistance and high current carrying capacity, making it ideal for efficient power management and switching applications. Its high performance features enable it to perform well in high power and high frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2.5(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(on))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(on))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum continuous drain current (ID)**: 150A
- **Technology**: Trench technology
Domain and module applications：
Application fields and module examples
**BUK661R9-40C-VB**'s high performance makes it very suitable for multiple high-power and high-efficiency applications, including:
1. **Power management**: The extremely low on-resistance and high current capability of this MOSFET make it very suitable for use in efficient power management systems. For example, in DC-DC converters and power modules, it can provide efficient current switching, reduce energy loss, and improve the overall efficiency of the system.
2. **Electric vehicles**: In the power electronics systems of electric vehicles, such as battery management systems (BMS) and motor drive systems, BUK661R9-40C-VB can be used to control the flow of high currents and ensure the stability and reliability of the system. This is crucial to improving the performance and endurance of electric vehicles.
3. **Inverter systems**: In solar inverters or other high-power inverter systems, this MOSFET can effectively handle high-power switching operations, provide efficient power conversion, and ensure stable operation of the system.
4. **Industrial Power**: In industrial power systems, this MOSFET can be used as a high current switching element, such as for high power supply and load switching applications, to provide stable and efficient power control.
In summary, BUK661R9-40C-VB is a high performance, high current and low on-resistance MOSFET, which is very suitable for high power power management and switching applications.
**BUK661R9-40C-VB**'s high performance makes it very suitable for multiple high-power and high-efficiency applications, including:
1. **Power management**: The extremely low on-resistance and high current capability of this MOSFET make it very suitable for use in efficient power management systems. For example, in DC-DC converters and power modules, it can provide efficient current switching, reduce energy loss, and improve the overall efficiency of the system.
2. **Electric vehicles**: In the power electronics systems of electric vehicles, such as battery management systems (BMS) and motor drive systems, BUK661R9-40C-VB can be used to control the flow of high currents and ensure the stability and reliability of the system. This is crucial to improving the performance and endurance of electric vehicles.
3. **Inverter systems**: In solar inverters or other high-power inverter systems, this MOSFET can effectively handle high-power switching operations, provide efficient power conversion, and ensure stable operation of the system.
4. **Industrial Power**: In industrial power systems, this MOSFET can be used as a high current switching element, such as for high power supply and load switching applications, to provide stable and efficient power control.
In summary, BUK661R9-40C-VB is a high performance, high current and low on-resistance MOSFET, which is very suitable for high power power management and switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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