BUK6610-75C-VB Product details
Product introduction:
BUK6610-75C-VB is a high-performance single N-channel MOSFET provided by NXP Semiconductors, packaged in TO-263. This MOSFET adopts advanced Trench technology and has a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V. At a gate-source voltage of 4.5V, its on-resistance is 10mΩ, and at a gate-source voltage of 10V, the on-resistance is further reduced to 6mΩ. BUK6610-75C-VB supports a continuous drain current (ID) of up to 120A, suitable for application scenarios requiring high current and low conduction loss. Its excellent switching performance and low power consumption characteristics make it excel in power management, power conversion, and motor drive.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 10(mΩ) | 6(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| Parameter| Value| Unit|
|------------------------|--------------------------|--------|
| Product Model| BUK6610-75C-VB | |
| Package| TO-263 | |
| Configuration| Single N-channel| |
| Drain-Source Voltage (VDS) | 80 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Threshold Voltage (Vth) | 3 | V |
| On-Resistance (RDS(ON)) | 10 (VGS = 4.5V) | mΩ |
| | 6 (VGS = 10V) | mΩ |
| Gate Current (IG) | 100 | nA |
| Continuous Drain Current (ID) | 120 | A |
| Transient pulse drain current (ID(pulse)) | 240 | A |
| Maximum power dissipation (Ptot) | 200 | W |
| Operating temperature range | -55 to +175 | °C |
| Storage temperature range | -55 to +175 | °C |
| Technology | Trench | |
Domain and module applications:
The high current handling capability and low on-resistance of BUK6610-75C-VB enable it to excel in many fields and applications. Here are a few specific application examples:
1. **Power management**: In high-power switching power supplies (SMPS) and DC-DC converters, BUK6610-75C-VB can be used as an efficient switching element with low on-resistance, which can significantly reduce energy loss and improve power conversion efficiency. This feature is particularly important in efficient power supply and power optimization.
2. **Motor drive**: Due to its ability to handle high current loads, this MOSFET is suitable for electric vehicles, power tools, and industrial motor drive systems. It can achieve efficient motor control, speed regulation, and start/stop control to meet the requirements of high current and high reliability.
3. **Power Conversion System**: In industrial power converters and inverters, BUK6610-75C-VB can handle high current loads and ensure the stability and reliability of the system. It is widely used in solar inverters and uninterruptible power supplies (UPS) to ensure the efficiency and stability of power conversion.
4. **Battery Management System**: In the Battery Management System (BMS), BUK6610-75C-VB can handle high current loads, provide overcurrent protection and battery switching functions. It can effectively improve the safety, reliability and performance of the battery system and ensure stable operation under various working conditions.
These application examples show the important role of BUK6610-75C-VB in scenarios with high current handling, low conduction loss and efficient switching.
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